| US 7,476,343 B2 | ||
| Sintered body target for transparent conductive film fabrication, transparent conductive film fabricated by using the same, and transparent conductive base material comprising this conductive film formed thereon | ||
| Tokuyuki Nakayama, Ichikawa (Japan); and Yoshiyuki Abe, Ichikawa (Japan) | ||
| Assigned to Sumitomo Metal Mining Co., Ltd., Tokyo (Japan) | ||
| Filed on Jan. 18, 2007, as Appl. No. 11/624,309. | ||
| Claims priority of application No. 2006-048701 (JP), filed on Feb. 24, 2006. | ||
| Prior Publication US 2007/0200100 A1, Aug. 30, 2007 | ||
| Int. Cl. H01B 1/08 (2006.01) | ||
| U.S. Cl. 252—518.1 | 2 Claims |
| 1. A sintered body target for transparent conductive film fabrication wherein the target is chiefly composed of Ga. In. and
O: has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from GaInO3 phase of a β-Ga2O3-type structure and in In2O3 phase of a bixbyite-type structure; provides an X-ray diffraction peak intensity ratio defined by the following equation that
is 45% or less; and has a density of 5.8g/cm3 or more:
In2O3 phase (400)/β-GaInO3 phase (111) ×100[%].
|