US 7,476,301 B2
Procedure and device for the production of a plasma
Jürgen Weichart, Fürstentum (Liechtenstein); Dominik Wimo Amman, Fürstentum (Liechtenstein); and Siegfried Krassnitzer, Feldkirch (Austria)
Assigned to Oc Oerlikon Balzers AG, Furstentum (Liechtenstein)
Filed on Sep. 27, 2002, as Appl. No. 10/256,718.
Claims priority of application No. 101 47 998 (DE), filed on Sep. 28, 2001.
Prior Publication US 2003/0075522 A1, Apr. 24, 2003
Int. Cl. C23C 14/00 (2006.01)
U.S. Cl. 204—192.13 15 Claims
OG exemplary drawing
 
1. A procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), characterized in that a direct current is continuously applied during the plasma processing simultaneously with said alternating current to the induction coil (2) in order to influence the plasma density; and
wherein said induction coil (2) is separated by means of a dielectric inner casing (7) or a dielectric window from at least the part of the vacuum recipient (1) in which the plasma is produced,
the alternating current is produced by a high-frequency generator (6) operating at a frequency between 100 and 14,000 kHz,
the plasma, is co-produced or co-excited by an electric voltage applied to at least one pair of electrodes (5a, 5b) separated by a certain distance,
the vacuum chamber (1a) contains a substrate table (8) for a substrate (9),
the substrate table (8) is formed by an electrode (5a) and
a dark space screening is used as counter-electrode (5b).