| US 7,474,567 B2 | ||
| Method for programming multi-level nitride read-only memory cells | ||
| Hsiang-Lan Lung, Hsinchu (Taiwan); and Chao-I Wu, Hsinchu (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Jun. 22, 2007, as Appl. No. 11/821,410. | ||
| Application 11/821410 is a continuation of application No. 11/026947, filed on Dec. 29, 2004, granted, now 7,251,167. | ||
| Prior Publication US 2007/0247925 A1, Oct. 25, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.24 [365/185.03; 365/185.29] | 18 Claims |
| 1. A method to alter a memory cell including a non-volatile charge-trapping memory cell having a plurality of data regions,
comprising:
programming at least one data region of said memory cell in an order according to a ranking of voltage threshold (Vt) values
associated thereto;
erasing all data regions of said memory cell by applying potentials to cause charge carriers injected into all data regions
to change Vt values.
|