| US 7,474,562 B2 | ||
| Method of forming and operating an assisted charge memory device | ||
| Ming-Chang Kuo, Hsinchu (Taiwan); Chao-I Wu, Hsinchu (Taiwan); Ming-Hsin Lee, Hsinchu (Taiwan); and Tzu-Hsuan Hsu, Hsinchu (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Dec. 01, 2005, as Appl. No. 11/292,024. | ||
| Claims priority of provisional application 60/633415, filed on Dec. 07, 2004. | ||
| Prior Publication US 2006/0146603 A1, Jul. 06, 2006 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185.18 [365/185.28; 365/185.29] | 8 Claims |
| 1. A method of forming an assisted charge memory (AC-memory) cell comprising:
(a) providing a charge trap memory cell including a two-sided charge trapping layer with a first side (AC-side) and a second
side (data-side); and
(b) forming a charge in at least a portion of the two-sided charge trapping layer,
wherein the AC-side of the charge trapping layer always has a first threshold voltage (Vt) level which is fixed by the assisted
charge for the AC-memory cell, and the data-side has a second threshold level, which is different from the first threshold
voltage level and is used for memory programming, and wherein an abrupt electric field exists between the AC-side and the
data-side.
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