| US 7,473,985 B2 | ||
| Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates | ||
| Louis Lu-Chen Hsu, Fishkill, N.Y. (US); Jack Allan Mandelman, Flat Rock, N.C. (US); and William Robert Tonti, Essex Junction, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jun. 16, 2005, as Appl. No. 11/154,906. | ||
| Prior Publication US 2006/0284250 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—627 [257/347; 257/350; 257/351; 257/369; 257/628] | 15 Claims |
| 1. A semiconductor structure comprising:
a silicon substrate;
an insulating layer on said substrate;
a plurality of electrically-isolated silicon-on-insulator (SOI) regions separated from said substrate by said insulating layer,
a first number of said SOI regions having a first crystal orientation, a second number of said SOI regions having a second
crystal orientation that differs from said first crystal orientation, and said SOI regions having a thickness of less than
or equal to 20 nm; and
a plurality of electrically-isolated bulk silicon regions extending through said insulating layer to said substrate, each
of said bulk silicon regions having a third crystal orientation that differs from the first and second crystal orientations.
|