| US 7,473,655 B2 | ||
| Method for silicon based dielectric chemical vapor deposition | ||
| Yaxin Wang, Fremont, Calif. (US); Yuji Maeda, Sakae-machi (Japan); Thomas C. Mele, Livermore, Calif. (US); Sean M. Seutter, San Jose, Calif. (US); Sanjeev Tandon, Sunnyvale, Calif. (US); and R. Suryanarayanan Iyer, Santa Clara, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jun. 17, 2005, as Appl. No. 11/155,646. | ||
| Prior Publication US 2006/0286818 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—791 [438/793; 438/794] | 23 Claims |
| 1. A method for depositing a silicon-containing film on a substrate, the method comprising:
heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;
flowing a silicon-free, nitrogen and carbon containing chemical into the processing chamber, the silicon-free, nitrogen and
carbon containing chemical comprising (H3C)—N═N—H;
flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and
depositing a silicon and nitrogen containing film on the substrate.
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