US 7,473,650 B2
Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
Juha T. Rantala, Helsinki (Finland); Jason S. Reid, Los Gatos, Calif. (US); T. Teemu T. Tormanen, Espoo (Finland); Nungavram S. Viswanathan, San Jose, Calif. (US); and Arto L. T. Maaninen, Oulu (Finland)
Assigned to Silecs Oy, Espoo (Finland)
Filed on Dec. 01, 2006, as Appl. No. 11/606,941.
Application 11/606941 is a division of application No. 10/346539, filed on Jan. 17, 2003, granted, now 7,144,827.
Claims priority of provisional application 60/414578, filed on Sep. 27, 2002.
Claims priority of provisional application 60/395418, filed on Jul. 13, 2002.
Claims priority of provisional application 60/349955, filed on Jan. 17, 2002.
Claims priority of provisional application 60/349873, filed on Jan. 17, 2002.
Claims priority of provisional application 60/349734, filed on Jan. 17, 2002.
Prior Publication US 2007/0077779 A1, Apr. 05, 2007
Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01)
U.S. Cl. 438—778  [438/780; 562/405] 1 Claim
OG exemplary drawing
 
1. A method for making an integrated circuit comprising forming alternating areas of electrically conductive and dielectric materials, the dielectric materials formed by hydrolysing, partially or fully, one or more precursors, at least one of which having the formula (I):

OG Complex Work Unit Drawing
where R2 is a halogen, —OH, or alkoxy group, where M1 and M2 are independently a metal or metalloid, and where R1 is a fully or partially fluorinated alkyl group having from 1 to 10 carbon atoms or a fully or partially fluorinated aromatic group.