| US 7,473,625 B2 | ||
| LDMOS device and method of fabrication | ||
| Mu-Yi Liu, Taichung (Taiwan); Chia-Lun Hsu, Taipei (Taiwan); Ichen Yang, Changhua (Taiwan); Kuan-Po Chen, Taipei (Taiwan); and Tao-Cheng Lu, Hsinchu (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Apr. 07, 2005, as Appl. No. 11/100,688. | ||
| Claims priority of provisional application 60/590305, filed on Jul. 22, 2004. | ||
| Prior Publication US 2006/0017102 A1, Jan. 26, 2006 | ||
| Int. Cl. H01L 21/3205 (2006.01) | ||
| U.S. Cl. 438—591 [438/981; 257/335; 257/411] | 10 Claims |
| 1. A method of fabricating a lateral double diffused metal oxide semiconductor (LDMOS) device, comprising steps of:
providing a substrate including a first well having a first conductivity type and a second well having a second conductivity
type;
forming an insulating layer using a first process on a portion of the substrate, such that a planar interface is provided
between said insulating layer and a surface of the substrate;
forming an insulating member using a second process different than the first process, on a portion of said insulating layer
having first and second sides over the second well;
forming a spacer on the first side of the insulating member to form a transition surface for a gate member, comprising:
(i) depositing a layer of insulating material over the insulating layer and insulating member; and
(ii) performing an etching process to form the spacer;
forming the gate member having a second side over part of said insulating member and a first side over said insulating layer
over the first well; and
forming a source region having the second conductivity type in the first well aligned with the first side of the gate member,
and a drain region having the second conductivity type in the second well adjacent the second side of the insulating member
such that said portion of the substrate on which the insulating layer is formed lies between said source region and said drain
region.
|