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Outline
Indent Level
Color Curly Brackets (indicating CPC extensions to IPC)



CPC
COOPERATIVE PATENT CLASSIFICATION
H01L 21/7682
. . . . .
{
the dielectric comprising air gaps
}
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H01L 21/76822
. . . . .
{
Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
}
{
WARNING: Groups H01L 21/76822-H01L 21/76837 are not complete; see provisionally H01L 21/76801
}
H01L 21/76823
. . . . . .
{
transforming an insulating layer into a conductive layer
}
H01L 21/76825
. . . . . .
{
by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.(plasma treatment H01L 21/76826)
}
H01L 21/76826
. . . . . .
{
by contacting the layer with gases, liquids or plasmas
}
H01L 21/76828
. . . . . .
{
thermal treatment
}
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H01L 21/76829
. . . . .
{
characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
}
H01L 21/76831
. . . . . .
{
in via holes or trenches, e.g. non-conductive sidewall liners
}
H01L 21/76832
. . . . . .
{
Multiple layers
}
H01L 21/76834
. . . . . .
{
formation of thin insulating films on the sidewalls or on top of conductors (H01L 21/76831 takes precedence)
}
H01L 21/76835
. . . . .
{
Combinations of two or more different dielectric layers having a low dielectric constant (H01L 21/76832 takes precedence)
}
H01L 21/76837
. . . . .
{
Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
}
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H01L 21/76838
. . . .
{
characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors H01L 21/3213)
}
NOTE
-
When the interconnect is also used as the conductor part of a conductor insulator semiconductor electrode (gate level interconnections), documents are classified in the relevant electrode manufacture groups, e.g. H01L 21/28026

H01L 21/7684
. . . . .
{
Smoothing; Planarisation
}
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H01L 21/76841
. . . . .
{
Barrier, adhesion or liner layers
}
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H01L 21/76843
. . . . . .
{
formed in openings in a dielectric
}
H01L 21/76844
. . . . . . .
{
Bottomless liners
}
H01L 21/76846
. . . . . . .
{
Layer combinations
}
H01L 21/76847
. . . . . . .
{
the layer being positioned within the main fill metal
}
H01L 21/76849
. . . . . . .
{
the layer being positioned on top of the main fill metal
}
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H01L 21/7685
. . . . . .
{
the layer covering a conductive structure (H01L 21/76849 takes precedence)
}
H01L 21/76852
. . . . . . .
{
the layer also covering the sidewalls of the conductive structure
}
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H01L 21/76853
. . . . . .
{
characterized by particular after-treatment steps
}
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H01L 21/76855
. . . . . . .
{
After-treatment introducing at least one additional element into the layer
}
H01L 21/76856
. . . . . . . .
{
by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
}
H01L 21/76858
. . . . . . . .
{
by diffusing alloying elements
}
H01L 21/76859
. . . . . . . .
{
by ion implantation
}
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H01L 21/76861
. . . . . . .
{
Post-treatment or after-treatment not introducing additional chemical elements into the layer
}
H01L 21/76862
. . . . . . . .
{
Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
}
H01L 21/76864
. . . . . . . .
{
Thermal treatment
}
H01L 21/76865
. . . . . . .
{
Selective removal of parts of the layer (H01L 21/76844 takes precedence)
}
H01L 21/76867
. . . . . .
{
characterized by methods of formation other than PVD, CVD or deposition from a liquids (PVD H01L 21/2855; CVD H01L 21/28556; deposition from liquids H01L 21/288)
}
H01L 21/76868
. . . . . .
{
Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
}
H01L 21/7687
. . . . . .
{
Thin films associated with contacts of capacitors
}
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H01L 21/76871
. . . . . .
{
Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
}
H01L 21/76873
. . . . . . .
{
for electroplating
}
H01L 21/76874
. . . . . . .
{
for electroless plating
}
H01L 21/76876
. . . . . . .
{
for deposition from the gas phase, e.g. CVD
}
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H01L 21/76877
. . . . .
{
Filling of holes, grooves or trenches, e.g. vias, with conductive material
}
H01L 21/76879
. . . . . .
{
by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general H01L 21/288)
}
H01L 21/7688
. . . . . .
{
by deposition over sacrificial masking layer, e.g. lift-off (lift-off per se H01L21/00B2)
}
H01L 21/76882
. . . . . .
{
Reflowing or applying of pressure to better fill the contact hole
}
H01L 21/76883
. . . . . .
{
Post-treatment or after-treatment of the conductive material
}
H01L 21/76885
. . . . .
{
By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
}
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H01L 21/76886
. . . . .
{
Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
}
H01L 21/76888
. . . . . .
{
By rendering at least a portion of the conductor non conductive, e.g. oxidation
}
H01L 21/76889
. . . . . .
{
by forming silicides of refractory metals
}
H01L 21/76891
. . . . . .
{
by using supraconducting materials
}
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H01L 21/76892
. . . . . .
{
modifying the pattern
}
H01L 21/76894
. . . . . . .
{
using a laser, e.g. laser cutting, laser direct writing, laser repair
}
H01L 21/76895
. . . . .
{
Local interconnects; Local pads, as exemplified by patent document EP0896365
}
H01L 21/76897
. . . .
{
Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors H01L21/336M)
}
H01L 21/76898
. . . .
{
formed through a semiconductor substrate
}
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H01L 21/77
. .
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
NOTE
-
Integration processes for the manufacture of devices of the type classified in H01L 27/14 to H01L 27/32 are not classified in this group and its sub-groups. Instead, as they are peculiar to said devices, they are classified together with the devices Multistep processes for manufacturing memory structures in general using field effect technology are covered by H01L 27/105M; Multistep processes for manufacturing dynamic random access memory structures are covered by H01L 27/108M; Multistep processes for manufacturing static random access memory structures are covered by H01L 27/11; Multistep processes for manufacturing read-only memory structures are covered by H01L 27/112; Multistep processes for manufacturing electrically programmable read-only memory structures are covered by H01L 27/115

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H01L 21/78
. . .
with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304)
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H01L 21/7806
. . . .
{
involving the separation of the active layers from a substrate
}
H01L 21/7813
. . . . .
{
leaving a reusable substrate, e.g. epitaxial lift off
}
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H01L 21/782
. . . .
to produce devices, each consisting of a single circuit element (H01L 21/82 takes precedence)
H01L 21/784
. . . . .
the substrate being a semiconductor body
H01L 21/786
. . . . .
the substrate being other than a semiconductor body, e.g. insulating body
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H01L 21/82
. . . .
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 21/8206
. . . . .
{
the substrate being a semiconductor, using diamond technology (H01L 21/8258 takes precedence)
}
H01L 21/8213
. . . . .
{
the substrate being a semiconductor, using SiC technology (H01L 21/8258 takes precedence)
}
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H01L 21/822
. . . . .
the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence)
H01L 21/8221
. . . . . .
{
Three dimensional integrated circuits stacked in different levels
}
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H01L 21/8222
. . . . . .
Bipolar technology
H01L 21/8224
. . . . . . .
comprising a combination of vertical and lateral transistors
H01L 21/8226
. . . . . . .
comprising merged transistor logic or integrated injection logic
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H01L 21/8228
. . . . . . .
Complementary devices, e.g. complementary transistors
H01L 21/82285
. . . . . . . .
{
Complementary vertical transistors
}
H01L 21/8229
. . . . . . .
Memory structures
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H01L 21/8232
. . . . . .
Field-effect technology
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H01L 21/8234
. . . . . . .
MIS technology
{
, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
}
H01L 21/823406
. . . . . . . .
{
Combination of charge coupled devices, i.e. CCD, or BBD
}
H01L 21/823412
. . . . . . . .
{
with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
}
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H01L 21/823418
. . . . . . . .
{
with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
}
H01L 21/823425
. . . . . . . . .
{
manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
}
H01L 21/823431
. . . . . . . .
{
with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
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H01L 21/823437
. . . . . . . .
{
with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
}
H01L 21/823443
. . . . . . . . .
{
silicided or salicided gate conductors
}
H01L 21/82345
. . . . . . . . .
{
gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
}
H01L 21/823456
. . . . . . . . .
{
gate conductors with different shapes, lengths or dimensions
}
H01L 21/823462
. . . . . . . .
{
with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
}
H01L 21/823468
. . . . . . . .
{
with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
}
H01L 21/823475
. . . . . . . .
{
interconnection or wiring or contact manufacturing related aspects
}
H01L 21/823481
. . . . . . . .
{
isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
}
H01L 21/823487
. . . . . . . .
{
with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L 21/823431)
}
H01L 21/823493
. . . . . . . .
{
with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI)
}
H01L 21/8236
. . . . . . . .
Combination of enhancement and depletion transistors
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H01L 21/8238
. . . . . . . .
Complementary field-effect transistors, e.g. CMOS
H01L 21/823807
. . . . . . . . .
{
with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
}
H01L 21/823814
. . . . . . . . .
{
with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
}
H01L 21/823821
. . . . . . . . .
{
with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
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H01L 21/823828
. . . . . . . . .
{
with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
}
H01L 21/823835
. . . . . . . . . .
{
silicided or salicided gate conductors
}
H01L 21/823842
. . . . . . . . . .
{
gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
}
H01L 21/82385
. . . . . . . . . .
{
gate conductors with different shapes, lengths or dimensions
}
H01L 21/823857
. . . . . . . . .
{
with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
}
H01L 21/823864
. . . . . . . . .
{
with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
}
H01L 21/823871
. . . . . . . . .
{
interconnection or wiring or contact manufacturing related aspects
}
H01L 21/823878
. . . . . . . . .
{
isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
}
H01L 21/823885
. . . . . . . . .
{
with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface H01L 21/823821)
}
H01L 21/823892
. . . . . . . . .
{
with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI)
}
H01L 21/8239
. . . . . . . .
Memory structures
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H01L 21/8248
. . . . . .
Combination of bipolar and field-effect technology
H01L 21/8249
. . . . . . .
Bipolar and MOS technology
H01L 21/8252
. . . . .
the substrate being a semiconductor, using III-V technology (H01L 21/8258 takes precedence)
H01L 21/8254
. . . . .
the substrate being a semiconductor, using II-VI technology (H01L 21/8258 takes precedence)
H01L 21/8256
. . . . .
the substrate being a semiconductor, using technologies not covered by one of groups
{
H01L 21/8206, H01L 21/8213
}
, H01L 21/822, H01L 21/8252 and H01L 21/8254 (H01L 21/8258 takes precedence)
H01L 21/8258
. . . . .
the substrate being a semiconductor, using a combination of technologies covered by
{
H01L 21/8206, H01L 21/8213
}
, H01L 21/822, H01L 21/8252, H01L 21/8254 or H01L 21/8256
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H01L 21/84
. . . . .
the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 21/845
. . . . . .
{
including field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
H01L 21/86
. . . . . .
the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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H01L 22/00
{
Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor (detecting or counting or handling H01L 21/67005; marks applied to semiconductor devices H01L 23/544; testing methods or structures peculiar to devices provided for in groups H01L 31/00 to H01L 51/00, see these groups; investigating or analysing materials by the use of optical means G01N 21/00; testing electrical properties of individual semiconductor devices G01R 31/26; testing of photovoltaic systems H02S 50/00)
}
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H01L 22/10
.
{
Measuring as part of the manufacturing process (burn-in G01R31/28C8)
}
H01L 22/12
. .
{
for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (electrical measurement of diffusions H01L 22/14)
}
H01L 22/14
. .
{
for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
}
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H01L 22/20
.
{
Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
}
H01L 22/22
. .
{
Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement (testing and repair of stores after manufacture including at wafer scale G11C 29/00; fuses per se H01L 23/525)
}
H01L 22/24
. .
{
Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change (voltage contrast G01R 31/311)
}
H01L 22/26
. .
{
Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement (endpoint detection arrangements in CMP apparatus B24B 37/013, in discharge apparatus H01J37/32D1C1)
}
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H01L 22/30
.
{
Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
}
H01L 22/32
. .
{
Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors (arrangements for conducting electric current to or from the solid state body in operation H01L 23/48)
}
H01L 22/34
. .
{
Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line (switching, multiplexing, gating devices G01R 19/25; process control with lithography, e.g. dose control, G03F 7/20; structures for alignment control by optical means G03F7/20T8)
}
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H01L 23/00
Details of semiconductor or other solid state devices (H01L 25/00 takes precedence;
{
structural arrangements for testing or measuring during manufacture or treatment, or for reliability measurements H01L 22/00; arrangements for connecting or disconnecting semiconductor or solid-state bodies, or methods related thereto H01L 24/00; finger print sensors G06K 9/00006
}
)
NOTE
-
This group does not cover:
- details of semiconductor bodies or of electrodes of devices provided for in group H01L 29/00, which details are covered by that group;
- details peculiar to devices provided for in a single main group of groups H01L 31/00 to H01L 51/00, which details are covered by those groups.

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H01L 23/02
.
Containers; Seals (H01L 23/12, H01L 23/34, H01L 23/48, H01L 23/552,
{
H01L 23/66
}
take precedence;
{
for memories G11C
}
)
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H01L 23/04
. .
characterised by the shape
{
of the container or parts, e.g. caps, walls
}
H01L 23/041
. . .
{
the container being a hollow construction having no base used as a mounting for the semiconductor body
}
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H01L 23/043
. . .
the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
H01L 23/045
. . . .
the other leads having an insulating passage through the base
H01L 23/047
. . . .
the other leads being parallel to the base
H01L 23/049
. . . .
the other leads being perpendicular to the base
H01L 23/051
. . . .
another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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H01L 23/053
. . .
the container being a hollow construction and having an insulating
{
or insulated
}
base as a mounting for the semiconductor body
H01L 23/055
. . . .
the leads having a passage through the base
{
(H01L 23/057 takes precedence)
}
H01L 23/057
. . . .
the leads being parallel to the base
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H01L 23/06
. .
characterised by the material of the container or its electrical properties
H01L 23/08
. . .
the material being an electrical insulator, e.g. glass
H01L 23/10
. .
characterised by the material or arrangement of seals between parts,ween cap e.g. between cap and base of the container or between leads and walls of the container
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H01L 23/12
.
Mountings, e.g. non-detachable insulating substrates
H01L 23/13
. .
characterised by the shape
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H01L 23/14
. .
characterised by the material or its electrical properties
{
(printed circuit boards H05K 1/00)
}
H01L 23/142
. . .
{
Metallic substrates having insulating layers
}
H01L 23/145
. . .
{
Organic substrates, e.g. plastic
}
H01L 23/147
. . .
{
Semiconductor insulating substrates (semiconductor conductive substrates H01L 23/4926)
}
H01L 23/15
. . .
Ceramic or glass substrates
{
(H01L 23/142, H01L 23/145, H01L 23/147 take precedence)
}
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H01L 23/16
.
Fillings or auxiliary members in containers
{
or encapsulations
}
, e.g. centering rings (H01L 23/42, H01L 23/552 take precedence)
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H01L 23/18
. .
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
NOTE
-
Group H01L 23/26 takes precedence over groups H01L 23/20 to H01L 23/24

H01L 23/20
. . .
gaseous at the normal operating temperature of the device
H01L 23/22
. . .
liquid at the normal operating temperature of the device
H01L 23/24
. . .
Solid or gel at the normal operating temperature of the device
{
(H01L 23/3135 takes precedence)
}
H01L 23/26
. . .
including materials for absorbing or reacting with moisture or other undesired substances,
{
e.g. getters
}
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H01L 23/28
.
Encapsulations, e.g. encapsulating layers, coatings,
{
e.g. for protection
}
(H01L 23/552 takes precedence;
{
insulating layers for contacts or interconnections H01L 23/5329
}
)
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H01L 23/29
. .
characterised by the material
{
e.g. carbon (interlayer dielectrics H01L 23/5329)
}
H01L 23/291
. . .
{
Oxides or nitrides or carbides, e.g. ceramics, glass
}
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H01L 23/293
. . .
{
Organic, e.g. plastic
}
H01L 23/295
. . . .
{
containing a filler (H01L 23/296 takes precedence)
}
H01L 23/296
. . . .
{
Organo-silicon compounds
}
H01L 23/298
. . .
{
Semiconductor material, e.g. amorphous silicon
}
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H01L 23/31
. .
characterised by the arrangement
{
or shape
}
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H01L 23/3107
. . .
{
the device being completely enclosed
}
H01L 23/3114
. . . .
{
the device being a chip scale package, e.g. CSP
}
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H01L 23/3121
. . . .
{
a substrate forming part of the encapsulation
}
H01L 23/3128
. . . . .
{
the substrate having spherical bumps for external connection
}
H01L 23/3135
. . . .
{
Double encapsulation or coating and encapsulation
}
H01L 23/3142
. . . .
{
Sealing arrangements between parts, e.g. adhesion promotors
}
H01L 23/315
. . . .
{
the encapsulation having a cavity
}
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H01L 23/3157
. . .
{
Partial encapsulation or coating (mask layer used as insulation layer H01L 21/31)
}
H01L 23/3164
. . . .
{
the coating being a foil
}
H01L 23/3171
. . . .
{
the coating being directly applied to the semiconductor body, e.g. passivation layer (H01L 23/3178 takes precedence)
}
H01L 23/3178
. . . .
{
Coating or filling in grooves made in the semiconductor body
}
H01L 23/3185
. . . .
{
the coating covering also the sidewalls of the semiconductor body
}
H01L 23/3192
. . . .
{
Multilayer coating
}
H01L 23/32
.
Holders for supporting the complete device in operation, i.e. detachable fixtures (H01L 23/40 takes precedence; connectors,
{
e.g. sockets
}
, in general H01R; for printed circuits H05K)
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H01L 23/34
.
Arrangements for cooling, heating, ventilating or temperature compensation;
{
Temperature sensing arrangements (thermal treatment apparatus H01L 21/00)
}
H01L 23/345
. .
{
Arrangements for heating (thermal treatment apparatus H01L 21/00)
}
Collapse
H01L 23/36
. .
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
{
(H01L 23/28, H01L 23/40, H01L 23/42, H01L 23/44, H01L 23/46 take precedence; heating H01L 23/345)
}
Collapse
H01L 23/367
. . .
Cooling facilitated by shape of device
{
(H01L 23/38, H01L 23/40, H01L 23/42, H01L 23/44, H01L 23/46 take precedence)
}
H01L 23/3672
. . . .
{
Foil-like cooling fins or heat sinks (being part of lead-frames H01L 23/49568)
}
H01L 23/3675
. . . .
{
characterised by the shape of the housing
}
H01L 23/3677
. . . .
{
Wire-like or pin-like cooling fins or heat sinks
}
Collapse
H01L 23/373
. . .
Cooling facilitated by selection of materials for the device
{
or materials for thermal expansion adaptation, e.g. carbon
}
H01L 23/3731
. . . .
{
Ceramic materials or glass (H01L 23/3732, H01L 23/3733, H01L 23/3735, H01L 23/3737, H01L 23/3738 take precedence)
}
H01L 23/3732
. . . .
{
Diamonds
}
H01L 23/3733
. . . .
{
having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures (H01L 23/3732, H01L 23/3737 take precedence)
}
H01L 23/3735
. . . .
{
Laminates or multilayers, e.g. direct bond copper ceramic substrates
}
H01L 23/3736
. . . .
{
Metallic materials (H01L 23/3732, H01L 23/3733, H01L 23/3735, H01L 23/3737, H01L 23/3738 take precedence)
}
H01L 23/3737
. . . .
{
Organic materials with or without a thermoconductive filler
}
H01L 23/3738
. . . .
{
Semiconductor materials
}
H01L 23/38
. .
Cooling arrangements using the Peltier effect
Collapse
H01L 23/40
. .
Mountings or securing means for detachable cooling or heating arrangements
{
(heating H01L 23/345); fixed by friction, plugs or springs
}
Collapse
H01L 23/4006
. . .
{
with bolts or screws
}
H01L 23/4012
. . . .
{
for stacked arrangements of a plurality of semiconductor devices (assemblies per se H01L 25/00)
}
H01L 23/4093
. . .
{
Snap-on arrangements, e.g. clips
}
Collapse
H01L 23/42
. .
Fillings or auxiliary members in containers
{
or encapsulations
}
selected or arranged to facilitate heating or cooling (
{
heating H01L 23/345
}
; characterised by selection of materials for the device H01L 23/373)
Collapse
H01L 23/427
. . .
Cooling by change of state, e.g. use of heat pipes
{
(by liquefied gas H01L 23/445)
}
H01L 23/4275
. . . .
{
by melting or evaporation of solids
}
Collapse
H01L 23/433
. . .
Auxiliary members
{
in containers
}
characterised by their shape, e.g. pistons
H01L 23/4332
. . . .
{
Bellows
}
H01L 23/4334
. . . .
{
Auxiliary members in encapsulations (H01L 23/49568 takes precedence)
}
H01L 23/4336
. . . .
{
in combination with jet impingement
}
H01L 23/4338
. . . .
{
Pistons, e.g. spring-loaded members
}
Collapse
H01L 23/44
. .
the complete device being wholly immersed in a fluid other than air
{
(H01L 23/427 takes precedence)
}
H01L 23/445
. . .
{
the fluid being a liquefied gas, e.g. in a cryogenic vessel
}
Collapse
H01L 23/46
. .
involving the transfer of heat by flowing fluids (H01L 23/42, H01L 23/44 take precedence)
H01L 23/467
. . .
by flowing gases, e.g. air
{
(H01L 23/473 takes precedence)
}
Collapse
H01L 23/473
. . .
by flowing liquids
{
(H01L 23/4332, H01L 23/4338 take precedence)
}
H01L 23/4735
. . . .
{
Jet impingement (H01L 23/4336 takes precedence)
}
Collapse
H01L 23/48
.
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements (in general H01R);
{
Selection of materials therefor
}
NOTE
-
Arrangements for connecting or disconnecting semiconductor or other solid state bodies, or methods related thereto, other than those arrangements or methods covered by the following subgroups, are covered by H01L 24/00

H01L 23/481
. .
{
Internal lead connections, e.g. via connections, feedthrough structures
}
Collapse
H01L 23/482
. .
consisting of lead-in layers inseparably applied to the semiconductor body
{
(electrodes H01L 29/40)
}
WARNING
-
The documents of this group dealing with arrangements for connecting semiconductor or other solid state bodies are being continuously reclassified to H01L 24/01 and subgroups

H01L 23/4821
. . .
{
Bridge structure with air gap
}
H01L 23/4822
. . .
{
Beam leads
}
H01L 23/4824
. . .
{
Pads with extended contours, e.g. grid structure, branch structure, finger structure
}
H01L 23/4825
. . .
{
for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
}
Collapse
H01L 23/4827
. . .
{
Materials
}
H01L 23/4828
. . . .
{
Conductive organic material or pastes, e.g. conductive adhesives, inks
}
Collapse
H01L 23/485
. . .
consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
{
(H01L 23/4821, H01L 23/4822, H01L 23/4824, H01L 23/4825 take precedence; materials H01L 23/532, bond pads H01L 24/02, bump connectors H01L 24/10)
}
WARNING
-
The documents of this group dealing with arrangements for connecting semiconductor or other solid state bodies are being continuously reclassified to H01L 24/01 and subgroups

H01L 23/4855
. . . .
{
Overhang structure
}
Collapse
H01L 23/488
. .
consisting of soldered
{
or bonded
}
constructions
{
(bump connectors H01L 24/01)
}
H01L 23/49
. . .
Wire-like
{
arrangements or pins or rods (using optical fibres H01L 23/48; pins attached to insulating substrates H01L 23/49811)
}
WARNING
-
This group is no longer used for the classification of new documents as from June 1, 2010. The backlog of this group is being continuously reclassified to H01L23/00C2W and subgroups

Collapse
H01L 23/492
. . .
Bases or plates
{
or solder therefor
}
H01L 23/4922
. . . .
{
having a heterogeneous or anisotropic structure
}
Collapse
H01L 23/4924
. . . .
{
characterised by the materials
}
H01L 23/4926
. . . . .
{
the materials containing semiconductor material
}
H01L 23/4928
. . . . .
{
the materials containing carbon
}
Collapse
H01L 23/495
. . .
Lead-frames
{
or other flat leads (H01L 23/498 takes precedence; lead frame interconnections between components H01L 23/52)
}
Collapse
H01L 23/49503
. . . .
{
characterised by the die pad
}
H01L 23/49506
. . . . .
{
an insulative substrate being used as a diepad, e.g. ceramic, plastic (H01L 23/49531 takes precedence)
}
H01L 23/4951
. . . . .
{
Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
}
H01L 23/49513
. . . . .
{
having bonding material between chip and die pad
}
Collapse
H01L 23/49517
. . . .
{
Additional leads
}
H01L 23/4952
. . . . .
{
the additional leads being a bump or a wire
}
H01L 23/49524
. . . . .
{
the additional leads being a tape carrier or flat leads
}
H01L 23/49527
. . . . .
{
the additional leads being a multilayer
}
H01L 23/49531
. . . . .
{
the additional leads being a wiring board
}
H01L 23/49534
. . . .
{
Multi-layer
}
H01L 23/49537
. . . .
{
Plurality of lead frames mounted in one device
}
Collapse
H01L 23/49541
. . . .
{
Geometry of the lead-frame
}
H01L 23/49544
. . . . .
{
Deformation absorbing parts in the lead frame plane, e.g. meanderline shape (H01L 23/49562 takes precedence)
}
Collapse
H01L 23/49548
. . . . .
{
Cross section geometry (H01L 23/49562 takes precedence)
}
Collapse
H01L 23/49551
. . . . . .
{
characterised by bent parts
}
H01L 23/49555
. . . . . . .
{
the bent parts being the outer leads
}
H01L 23/49558
. . . . .
{
Insulating layers on lead frames, e.g. bridging members
}
H01L 23/49562
. . . . .
{
for devices being provided for in H01L 29/00
}
H01L 23/49565
. . . . .
{
Side rails of the lead frame, e.g. with perforations, sprocket holes
}
H01L 23/49568
. . . .
{
specifically adapted to facilitate heat dissipation
}
H01L 23/49572
. . . .
{
consisting of thin flexible metallic tape with or without a film carrier (H01L 23/49503 to H01L 23/49568 and H01L 23/49575 to H01L 23/49579 take precedence)
}
H01L 23/49575
. . . .
{
Assemblies of semiconductor devices on lead frames
}
Collapse
H01L 23/49579
. . . .
{
characterised by the materials of the lead frames or layers thereon
}
H01L 23/49582
. . . . .
{
Metallic layers on lead frames
}
H01L 23/49586
. . . . .
{
Insulating layers on lead frames
}
H01L 23/49589
. . . .
{
Capacitor integral with or on the leadframe
}
H01L 23/49593
. . . .
{
Battery in combination with a leadframe
}
H01L 23/49596
. . . .
{
Oscillators in combination with lead-frames
}
Collapse
H01L 23/498
. . .
Leads,
{
i.e. metallisations or lead-frames
}
on insulating substrates,
{
e.g. chip carriers (shape of the substrate H01L 23/13)
}
H01L 23/49805
. . . .
{
the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
}
Collapse
H01L 23/49811
. . . .
{
Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads (H01L 23/49827 takes precedence)
}
H01L 23/49816
. . . . .
{
Spherical bumps on the substrate for external connection, e.g. ball grid arrays (BGA)
}
H01L 23/49822
. . . .
{
Multilayer substrates (multilayer metallisation on monolayer substrate H01L 23/498)
}
H01L 23/49827
. . . .
{
Via connections through the substrates, e.g. pins going through the substrate, coaxial cables (H01L 23/49822, H01L 23/49833, H01L 23/4985, H01L 23/49861 take precedence)
}
H01L 23/49833
. . . .
{
the chip support structure consisting of a plurality of insulating substrates
}
Collapse
H01L 23/49838
. . . .
{
Geometry or layout
}
H01L 23/49844
. . . . .
{
for devices being provided for in H01L 29/00
}
H01L 23/4985
. . . .
{
Flexible insulating substrates (H01L 23/49572 and H01L 23/49855 take precedence)
}
H01L 23/49855
. . . .
{
for flat-cards, e.g. credit cards (cards per se G06K 19/00)
}
H01L 23/49861
. . . .
{
Lead-frames fixed on or encapsulated in insulating substrates (H01L 23/4985, H01L 23/49805 take precedence)
}
Collapse
H01L 23/49866
. . . .
{
characterised by the materials (materials of the substrates H01L 23/14, of the lead-frames H01L 23/49579)
}
H01L 23/49872
. . . . .
{
the conductive materials containing semiconductor material
}
H01L 23/49877
. . . . .
{
Carbon, e.g. fullerenes (superconducting fullerenes H01L 39/123)
}
H01L 23/49883
. . . . .
{
the conductive materials containing organic materials or pastes, e.g. for thick films (for printed circuits H05K 1/092)
}
H01L 23/49888
. . . . .
{
the conductive materials containing superconducting material
}
H01L 23/49894
. . . . .
{
Materials of the insulating layers or coatings
}
H01L 23/50
. .
for integrated circuit devices,
{
e.g. power bus, number of leads
}
(H01L 23/482 to H01L 23/498 take precedence)
Collapse
H01L 23/52
.
Arrangements for conducting electric current within the device in operation from one component to another,
{
i.e. interconnections, e.g. wires, lead frames (optical interconnections G02B 6/00)
}
Collapse
H01L 23/522
. .
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/5221
. . .
{
Crossover interconnections
}
Collapse
H01L 23/5222
. . .
{
Capacitive arrangements or effects of, or between wiring layers (other capacitive arrangements H01L 23/642)
}
H01L 23/5223
. . . .
{
Capacitor integral with wiring layers
}
H01L 23/5225
. . . .
{
Shielding layers formed together with wiring layers
}
H01L 23/5226
. . .
{
Via connections in a multilevel interconnection structure
}
H01L 23/5227
. . .
{
Inductive arrangements or effects of, or between, wiring layers (other inductive arrangements H01L 23/645)
}
H01L 23/5228
. . .
{
Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements H01L 23/647)
}
Collapse
H01L 23/525
. . .
with adaptable interconnections
Collapse
H01L 23/5252
. . . .
{
comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
}
H01L 23/5254
. . . . .
{
the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
}
Collapse
H01L 23/5256
. . . .
{
comprising fuses, i.e. connections having their state changed from conductive to non-conductive
}
H01L 23/5258
. . . . .
{
the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
}
Collapse
H01L 23/528
. . .
{
Geometry or
}
layout of the interconnection structure
{
(H01L 27/0207 takes precedence; algorithms G06F 17/50)
}
H01L 23/5283
. . . .
{
Cross-sectional geometry
}
H01L 23/5286
. . . .
{
Arrangements of power or ground buses
}
Collapse
H01L 23/532
. . .
characterised by the materials
Collapse
H01L 23/53204
. . . .
{
Conductive materials
}
Collapse
H01L 23/53209
. . . . .
{
based on metals, e.g. alloys, metal silicides (H01L 23/53285 takes precedence)
}
Collapse
H01L 23/53214
. . . . . .
{
the principal metal being aluminium
}
H01L 23/53219
. . . . . . .
{
Aluminium alloys
}
H01L 23/53223
. . . . . . .
{
Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
}
Collapse
H01L 23/53228
. . . . . .
{
the principal metal being copper
}
H01L 23/53233
. . . . . . .
{
Copper alloys
}
H01L 23/53238
. . . . . . .
{
Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
}
Collapse
H01L 23/53242
. . . . . .
{
the principal metal being a noble metal, e.g. gold
}
H01L 23/53247
. . . . . . .
{
Noble-metal alloys
}
H01L 23/53252
. . . . . . .
{
Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
}
Collapse
H01L 23/53257
. . . . . .
{
the principal metal being a refractory metal
}
H01L 23/53261
. . . . . . .
{
Refractory-metal alloys
}
H01L 23/53266
. . . . . . .
{
Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
}
H01L 23/53271
. . . . .
{
containing semiconductor material, e.g. polysilicon
}
H01L 23/53276
. . . . .
{
containing carbon, e.g. fullerenes (superconducting fullerenes H01L 39/123)
}
H01L 23/5328
. . . . .
{
containing conductive organic materials or pastes, e.g. conductive adhesives, inks
}
H01L 23/53285
. . . . .
{
containing superconducting materials
}
Collapse
H01L 23/5329
. . . .
{
Insulating materials
}
H01L 23/53295
. . . . .
{
Stacked insulating layers
}
H01L 23/535
. .
including internal interconnections, e.g. cross-under constructions
{
(internal lead connections H01L 23/481)
}
Collapse
H01L 23/538
. .
the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates (
{
H05K takes precedence; manufacture or treatment H01L 21/4846
}
; mountings per se H01L 23/12;
{
materials H01L 23/49866
}
)
H01L 23/5381
. . .
{
Crossover interconnections, e.g. bridge stepovers
}
H01L 23/5382
. . .
{
Adaptable interconnections, e.g. for engineering changes
}
H01L 23/5383
. . .
{
Multilayer substrates (H01L 23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L 23/538)
}
H01L 23/5384
. . .
{
Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors (H01L 23/5383, H01L 23/5385 take precedence; pins attached to insulating substrates H01L 23/49811)
}
H01L 23/5385
. . .
{
Assembly of a plurality of insulating substrates
}
H01L 23/5386
. . .
{
Geometry or layout of the interconnection structure
}
H01L 23/5387
. . .
{
Flexible insulating substrates (H01L 23/5388 takes precedence)
}
H01L 23/5388
. . .
{
for flat cards, e.g. credit cards (cards per se G06K 19/00)
}
H01L 23/5389
. . .
{
the chips being integrally enclosed by the interconnect and support structures
}
H01L 23/544
.
Marks applied to semiconductor devices
{
or parts
}
, e.g. registration marks,
{
alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes H01L 22/00)
}
NOTE
-
H01L 23/544, details are to be further indexed by using the indexing codes chosen from H01L 2223/544 and subgroups

Collapse
H01L 23/552
.
Protection against radiation, e.g. light
{
or electromagnetic waves
}
H01L 23/556
. .
against alpha rays
H01L 23/562
.
{
Protection against mechanical damage (H01L 23/02, H01L 23/28 take precedence)
}
H01L 23/564
.
{
Details not otherwise provided for, e.g. protection against moisture (getters H01L 23/26)
}
Collapse
H01L 23/57
.
{
Protection from inspection, reverse engineering or tampering
}
H01L 23/573
. .
{
using passive means
}
H01L 23/576
. .
{
using active circuits
}
Collapse
H01L 23/58
.
Structural electrical arrangements for semiconductor devices not otherwise provided for,
{
e.g. in combination with batteries (H01L 23/49593, H01L 23/49596 take precedence)
}
H01L 23/585
. .
{
comprising conductive layers or plates or strips or rods or rings (H01L 23/60, H01L 23/62, H01L 23/64, H01L 23/66 take precedence)
}
H01L 23/60
. .
Protection against electrostatic charges or discharges, e.g. Faraday shields (in general H05F)
H01L 23/62
. .
Protection against overvoltage, e.g. fuses, shunts
Collapse
H01L 23/64
. .
Impedance arrangements
H01L 23/642
. . .
{
Capacitive arrangements (H01L 23/49589, H01L 23/645, H01L 23/647, H01L 23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L 23/5222)
}
H01L 23/645
. . .
{
Inductive arrangements (H01L 23/647, H01L 23/66 take precedence)
}
H01L 23/647
. . .
{
Resistive arrangements (H01L 23/66, H01L 23/62 take precedence)
}
H01L 23/66
. . .
High-frequency adaptations
NOTE
-
H01L 23/66, details are to be further indexed by using the indexing codes chosen from H01L 2223/66 and subgroups

Collapse
H01L 24/00
{
Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
}
NOTE
-
H01L 29/00, which details are covered by that group; - details peculiar to devices provided for in a single main group of groups H01L 31/00 to H01L 51/00, which details are covered by those groups. - printed circuits, which are covered by groups H05K 1/00 to H05K 1/18F; - apparatus or manufacturing processes for printed circuits, which are covered by groups H05K 3/00 to H05K 3/46D; - manufacture or treatment of parts, which are covered by group H01L 21/48 and subgroups except H01L 21/4885 to H01L 21/4896; - assemblies of semiconductor devices, which are covered by groups H01L 21/50 to H01L 21/56T; - applying interconnections to be used for carrying current between separate components within a device, which is covered by group H01L 21/768 and subgroups; - containers or seals, which are covered by groups H01L 23/02 to H01L 23/10; - mountings, which are covered by groups H01L 23/12 to H01L 23/15 and subgroups; - arrangements for cooling, heating, ventilating or temperature compensation, which are covered by groups H01L 23/34 to H01L 23/473J; - arrangements for conducting electric current, which are covered by groups H01L 23/48 to H01L 23/50, and by groups H01L 23/52 to H01L 23/538V; - structural electrical arrangements, which are covered by groups H01L 23/58 to H01L 23/66; - assemblies of semiconductor or other solid state devices, which are covered by groups H01L 25/00 to H01L 25/18. 2. In this group the following indexing codes are used : H01L 24/00 H01L 2224/00, H01L 2924/00, and subgroups thereof

WARNING
-
H01L 21/4885, H01L 21/58, H01L 23/48, H01L 23/482, H01L 23/485, H01L 23/488

Collapse
H01L 24/01
.
{
Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
}
WARNING
-
H01L 23/482, H01L 23/485 and subgroups 2. Pending reorganisation subgroups of this group are not complete; see also this group and the other subgroups

Collapse
H01L 24/02
. .
{
Bonding areas (on insulating substrates, e.g. chip carriers, H01L 23/49816, H01L 23/49838, H01L 23/5389); Manufacturing methods related thereto
}
WARNING
-
H01L 24/10 for Under Bump Metallization [UBM] 2. Pending reorganisation, subgroups of this group are not complete; see also this group

H01L 24/03
. . .
{
Manufacturing methods
}
Collapse
H01L 24/04
. . .
{
Structure, shape, material or disposition of the bonding areas prior to the connecting process
}
H01L 24/05
. . . .
{
of an individual bonding area
}
H01L 24/06
. . . .
{
of a plurality of bonding areas
}
Collapse
H01L 24/07
. . .
{
Structure, shape, material or disposition of the bonding areas after the connecting process
}
H01L 24/08
. . . .
{
of an individual bonding area
}
H01L 24/09
. . . .
{
of a plurality of bonding areas
}
Collapse
H01L 24/10
. .
{
Bump connectors (bumps on insulating substrates, e.g. chip carriers, H01L 23/49816); Manufacturing methods related thereto
}
WARNING
-

H01L 24/11
. . .
{
Manufacturing methods (for bumps on insulating substrates H01L 21/4853)
}
Collapse
H01L 24/12
. . .
{
Structure, shape, material or disposition of the bump connectors prior to the connecting process
}
H01L 24/13
. . . .
{
of an individual bump connector
}
H01L 24/14
. . . .
{
of a plurality of bump connectors
}
Collapse
H01L 24/15
. . .
{
Structure, shape, material or disposition of the bump connectors after the connecting process
}
H01L 24/16
. . . .
{
of an individual bump connector
}
H01L 24/17
. . . .
{
of a plurality of bump connectors
}
Collapse
H01L 24/18
. .
{
High density interconnect [HDI
}
connectors; Manufacturing methods related thereto (interconnection structure between a plurality of semiconductor chips H01L 23/5389)]
WARNING
-
H01L 24/82 2. Pending reorganisation, subgroups of this group are not complete; see also this group

H01L 24/19
. . .
{
Manufacturing methods of high density interconnect preforms
}
H01L 24/20
. . .
{
Structure, shape, material or disposition of high density interconnect preforms
}
Collapse
H01L 24/23
. . .
{
Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
}
H01L 24/24
. . . .
{
of an individual high density interconnect connector
}
H01L 24/25
. . . .
{
of a plurality of high density interconnect connectors
}
Collapse
H01L 24/26
. .
{
Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
}
H01L 24/27
. . .
{
Manufacturing methods
}
Collapse
H01L 24/28
. . .
{
Structure, shape, material or disposition of the layer connectors prior to the connecting process
}
H01L 24/29
. . . .
{
of an individual layer connector
}
H01L 24/30
. . . .
{
of a plurality of layer connectors
}
Collapse
H01L 24/31
. . .
{
Structure, shape, material or disposition of the layer connectors after the connecting process
}
H01L 24/32
. . . .
{
of an individual layer connector
}
H01L 24/33
. . . .
{
of a plurality of layer connectors
}
Collapse
H01L 24/34
. .
{
Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
}
WARNING
-
H01L 24/01, H01L 24/42, H01L 24/85 2. Pending reorganisation, subgroups of this group are not complete; see also this group

H01L 24/35
. . .
{
Manufacturing methods
}
Collapse
H01L 24/36
. . .
{
Structure, shape, material or disposition of the strap connectors prior to the connecting process
}
H01L 24/37
. . . .
{
of an individual strap connector
}
H01L 24/38
. . . .
{
of a plurality of strap connectors
}
Collapse
H01L 24/39
. . .
{
Structure, shape, material or disposition of the strap connectors after the connecting process
}
H01L 24/40
. . . .
{
of an individual strap connector
}
H01L 24/41
. . . .
{
of a plurality of strap connectors
}
Collapse
H01L 24/42
. .
{
Wire connectors; Manufacturing methods related thereto
}
WARNING
-

H01L 24/43
. . .
{
Manufacturing methods
}
WARNING
-
H01L 21/4885 and subgroups, H01L 24/42, H01L 24/85

Collapse
H01L 24/44
. . .
{
Structure, shape, material or disposition of the wire connectors prior to the connecting process
}
H01L 24/45
. . . .
{
of an individual wire connector
}
H01L 24/46
. . . .
{
of a plurality of wire connectors
}
Collapse
H01L 24/47
. . .
{
Structure, shape, material or disposition of the wire connectors after the connecting process
}
H01L 24/48
. . . .
{
of an individual wire connector
}
H01L 24/49
. . . .
{
of a plurality of wire connectors
}
H01L 24/50
. .
{
Tape automated bonding [TAB
}
connectors, i.e. film carriers; Manufacturing methods related thereto (thin flexible metallic tape with or without a film carrier H01L 23/49572, flexible insulating substrates H01L 23/4985, H01L 23/5387)]
WARNING
-
H01L 24/86

Collapse
H01L 24/63
. .
{
Connectors not provided for in any of the groups H01L 24/10 to H01L 24/50 and subgroups; Manufacturing methods related thereto
}
H01L 24/64
. . .
{
Manufacturing methods
}
Collapse
H01L 24/65
. . .
{
Structure, shape, material or disposition of the connectors prior to the connecting process
}
H01L 24/66
. . . .
{
of an individual connector
}
H01L 24/67
. . . .
{
of a plurality of connectors
}
Collapse
H01L 24/68
. . .
{
Structure, shape, material or disposition of the connectors after the connecting process
}
H01L 24/69
. . . .
{
of an individual connector
}
H01L 24/70
. . . .
{
of a plurality of connectors
}
Collapse
H01L 24/71
.
{
Means for bonding not being attached to, or not being formed on, the surface to be connected (holders for supporting the complete device in operation H01L 23/32)
}
H01L 24/72
. .
{
Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
}
H01L 24/73
.
{
Means for bonding being of different types provided for in two or more of groups H01L 24/10, H01L 24/18, H01L 24/26, H01L 24/34, H01L 24/42, H01L 24/50, H01L 24/63, H01L 24/71
}
Collapse
H01L 24/74
.
{
Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
}
Collapse
H01L 24/741
. .
{
Apparatus for manufacturing means for bonding, e.g. connectors
}
H01L 24/742
. . .
{
Apparatus for manufacturing bump connectors
}
H01L 24/743
. . .
{
Apparatus for manufacturing layer connectors
}
H01L 24/744
. . .
{
Apparatus for manufacturing strap connectors
}
H01L 24/745
. . .
{
Apparatus for manufacturing wire connectors
}
H01L 24/75
. .
{
Apparatus for connecting with bump connectors or layer connectors
}
H01L 24/76
. .
{
Apparatus for connecting with build-up interconnects
}
H01L 24/77
. .
{
Apparatus for connecting with strap connectors
}
H01L 24/78
. .
{
Apparatus for connecting with wire connectors
}
H01L 24/79
. .
{
Apparatus for Tape Automated Bonding [TAB]
}
H01L 24/799
. .
{
Apparatus for disconnecting
}
Collapse
H01L 24/80
.
{
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
}
WARNING
-
H01L21/60 2. Subgroups of this group are not complete; see also this group and the other subgroups

H01L 24/81
. .
{
using a bump connector
}
WARNING
-
H01L21/60C4

H01L 24/82
. .
{
by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI
}
(interconnection structure between a plurality of semiconductor chips H01L 23/5389)]
H01L 24/83
. .
{
using a layer connector
}
WARNING
-
H01L21/60C2

H01L 24/84
. .
{
using a strap connector
}
WARNING
-
H01L 24/85

H01L 24/85
. .
{
using a wire connector (wire bonding in general B23K 20/004)
}
H01L 24/86
. .
{
using tape automated bonding [TAB
}
]
H01L 24/89
. .
{
using at least one connector not provided for in any of the groups H01L 24/81 to H01L 24/86
}
H01L 24/90
.
{
Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
}
WARNING
-
H01L21/60E

Collapse
H01L 24/91
.
{
Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L 24/80 to H01L 24/90
}
H01L 24/92
. .
{
Specific sequence of method steps
}
Collapse
H01L 24/93
.
{
Batch processes
}
WARNING
-
H01L 24/80 and subgroups and H01L 24/90

H01L 24/94
. .
{
at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
}
Collapse
H01L 24/95
. .
{
at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
}
H01L 24/96
. . .
{
the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
}
H01L 24/97
. . .
{
the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
}
H01L 24/98
.
{
Methods for disconnecting semiconductor or solid-state bodies
}
Collapse
H01L 25/00
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
{
; Multistep manufacturing processes thereof
}
(
{
lead frames with assemblies of semiconductor devices thereon H01L 23/49575; assembling semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326, e.g. sealing of a cap to a base of a container, H01L 21/50
}
; devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; assemblies of photoelectric cells H01L 31/042,
{
H01G 9/20
}
; generators using solar cells or solar panels
{
H02S
}
; details of complete circuit assemblies for which provision exists in another subclass, e.g. details of television receivers, see the relevant subclass, e.g. H04N; details of assemblies of electrical components in general H05K)
Collapse
H01L 25/03
.
all the devices being of a type provided for in the same subgroup of groups H01L 27/00 to H01L 51/00, e.g. assemblies of rectifier diodes
Collapse
H01L 25/04
. .
the devices not having separate containers
Collapse
H01L 25/041
. . .
{
the devices being of a type provided for in group H01L 31/00
}
H01L 25/042
. . . .
{
the devices being arranged next to each other (solar cells H01L 31/042)
}
Collapse
H01L 25/043
. . . .
{
Stacked arrangements of devices
}
H01L 25/045
. . . . .
{
the devices being solar cells
}
Collapse
H01L 25/046
. . .
{
the devices being of a type provided for in group H01L 51/00
}
H01L 25/047
. . . .
{
the devices being of a type provided for in group H01L 51/42, e.g. photovoltaic modules based on organic solar cells
}
H01L 25/048
. . . .
{
the devices being of a type provided for in group H01L 51/50 , e.g. assembly of organic light emitting devices
}
Collapse
H01L 25/065
. . .
the devices being of a type provided for in group H01L 27/00
NOTE
-
Group H01L 25/0652 takes precedence over groups H01L 25/0655 and H01L 25/0657

H01L 25/0652
. . . .
{
the devices being arranged next and on each other, i.e. mixed assemblies
}
H01L 25/0655
. . . .
{
the devices being arranged next to each other
}
H01L 25/0657
. . . .
{
Stacked arrangements of devices
}
Collapse
H01L 25/07
. . .
the devices being of a type provided for in group H01L 29/00
NOTE
-
Group H01L 25/071 takes precedence over groups H01L 25/072 to H01L 25/074

H01L 25/071
. . . .
{
the devices being arranged next and on each other, i.e. mixed assemblies
}
H01L 25/072
. . . .
{
the devices being arranged next to each other
}
H01L 25/073
. . . .
{
Apertured devices mounted on one or more rods passed through the apertures
}
H01L 25/074
. . . .
{
Stacked arrangements of non-apertured devices
}
Collapse
H01L 25/075
. . .
the devices being of a type provided for in group H01L 33/00
H01L 25/0753
. . . .
{
the devices being arranged next to each other
}
H01L 25/0756
. . . .
{
Stacked arrangements of devices
}
Collapse
H01L 25/10
. .
the devices having separate containers
H01L 25/105
. . .
{
the devices being of a type provided for in group H01L 27/00
}
NOTE
-
H01L 25/105, details of the assemblies are to be further indexed by using the indexing codes chosen from H01L 2225/1005 and subgroups

Collapse
H01L 25/11
. . .
the devices being of a type provided for in group H01L 29/00
NOTE
-
Group H01L 25/112 takes precedence over groups H01L 25/115 and H01L 25/117

H01L 25/112
. . . .
{
Mixed assemblies
}
H01L 25/115
. . . .
{
the devices being arranged next to each other
}
H01L 25/117
. . . .
{
Stacked arrangements of devices
}
H01L 25/13
. . .
the devices being of a type provided for in group H01L 33/00
Collapse
H01L 25/16
.
the devices being of types provided for in two or more different main groups ofH01L 27/00 toH01L 49/00
{
andH01L 51/00
}
, e.g. forming hybrid circuits
{
(interconnections for hybrid circuitsH01L 23/5389 )
}
H01L 25/162
. .
{
the devices being mounted on two or more different substrates
}
H01L 25/165
. .
{
Containers
}
H01L 25/167
. .
{
comprising optoelectronic devices, e.g. LED, photodiodes
}
H01L 25/18
.
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L 27/00 to H01L 51/00
{
(comprising devices provided for in H01L 27/144 and subgroups, see H01L 27/144 and subgroups)
}
H01L 25/50
.
{
Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L 27/00 or H01L 29/00 (H01L 21/50 takes precedence)
}
Collapse
H01L 27/00
Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate (processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof H01L 21/70, H01L 31/00 to H01L 51/00; details thereof H01L 23/00, H01L 29/00 to H01L 51/00; assemblies consisting of a plurality of individual solid state devices H01L 25/00; assemblies of electrical components in general H05K)
NOTE
-
In this group, in the absence of an indication to the contrary, classification is made in the last appropriate place.

Collapse
H01L 27/01
.
comprising only passive thin-film or thick-film elements formed on a common insulating substrate
{
(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00)
}
NOTE
-
In groups H01L 27/01 to H01L 27/26, in the absence of an indication to the contrary, classification is made in the last appropriate place.

H01L 27/013
. .
{
Thick-film circuits
}
H01L 27/016
. .
{
Thin-film circuits
}
Collapse
H01L 27/02
.
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
Collapse
H01L 27/0203
. .
{
Particular design considerations for integrated circuits
}
Collapse
H01L 27/0207
. . .
{
Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
}
H01L 27/0211
. . . .
{
adapted for requirements of temperature (cooling arrangements per se H01L 23/34)
}
Collapse
H01L 27/0214
. . .
{
for internal polarisation, e.g. I2L
}
Collapse
H01L 27/0218
. . . .
{
of field effect structures
}
H01L 27/0222
. . . . .
{
Charge pumping, substrate bias generation structures (circuits G05F 3/205)
}
H01L 27/0225
. . . . .
{
Charge injection in static induction transistor logic structures, i.e. SITL (circuits H03K 19/0912)
}
Collapse
H01L 27/0229
. . . .
{
of bipolar structures
}
Collapse
H01L 27/0233
. . . . .
{
Integrated injection logic structures, i.e. I2L (circuits H03K 19/091)
}
H01L 27/0237
. . . . . .
{
using vertical injector structures
}
H01L 27/024
. . . . . .
{
using field effect injector structures
}
H01L 27/0244
. . . . . .
{
I2L structures integrated in combination with analog structures
}
Collapse
H01L 27/0248
. . .
{
for electrical or thermal protection, e.g. electrostatic discharge [ESD
}
protection (emergency protective circuit arrangements H02H; circuit arrangements for protecting electronic switches H03K 17/08; circuit arrangements for protecting logic circuits H03K 19/003)]
Collapse
H01L 27/0251
. . . .
{
for MOS devices
}
H01L 27/0255
. . . . .
{
using diodes as protective elements (diode connected field effect transistors H01L 27/0266; diode connected bipolar transistors H01L 27/0259)
}
Collapse
H01L 27/0259
. . . . .
{
using bipolar transistors as protective elements
}
H01L 27/0262
. . . . . .
{
including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR
}
devices]
Collapse
H01L 27/0266
. . . . .
{
using field effect transistors as protective elements
}
Collapse
H01L 27/027
. . . . . .
{
specially adapted to provide an electrical current path other than the field effect induced current path
}
H01L 27/0274
. . . . . . .
{
involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors
}
H01L 27/0277
. . . . . . .
{
involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
}
H01L 27/0281
. . . . . .
{
field effect transistors in a "Darlington-like" configuration
}
H01L 27/0285
. . . . . .
{
bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits (H01L 27/0281 takes precedence)
}
H01L 27/0288
. . . . .
{
using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
}
H01L 27/0292
. . . . .
{
using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
}
H01L 27/0296
. . . . .
{
involving a specific disposition of the protective devices
}
Collapse
H01L 27/04
. .
the substrate being a semiconductor body
Collapse
H01L 27/06
. . .
including a plurality of individual components in a non-repetitive configuration
H01L 27/0605
. . . .
{
integrated circuits made of compound material, e.g. AIIIBV
}
Collapse
H01L 27/0611
. . . .
{
integrated circuits having a two-dimensional layout of components without a common active region
}
Collapse
H01L 27/0617
. . . . .
{
comprising components of the field-effect type (H01L 27/0251 takes precedence)
}
H01L 27/0623
. . . . . .
{
in combination with bipolar transistors
}
H01L 27/0629
. . . . . .
{
in combination with diodes, or resistors, or capacitors
}
H01L 27/0635
. . . . . .
{
in combination with bipolar transistors and diodes, or resistors, or capacitors
}
Collapse
H01L 27/0641
. . . . .
{
without components of the field effect type
}
Collapse
H01L 27/0647
. . . . . .
{
Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
}
Collapse
H01L 27/0652
. . . . . . .
{
Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
}
H01L 27/0658
. . . . . . . .
{
Vertical bipolar transistor in combination with resistors or capacitors
}
H01L 27/0664
. . . . . . . .
{
Vertical bipolar transistor in combination with diodes
}
H01L 27/067
. . . . . . .
{
Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
}
Collapse
H01L 27/0676
. . . . . .
{
comprising combinations of diodes, or capacitors or resistors
}
H01L 27/0682
. . . . . . .
{
comprising combinations of capacitors and resistors
}
Collapse
H01L 27/0688
. . . .
{
Integrated circuits having a three-dimensional layout
}
H01L 27/0694
. . . . .
{
comprising components formed on opposite sides of a semiconductor substrate
}
Collapse
H01L 27/07
. . . .
the components having an active region in common
Collapse
H01L 27/0705
. . . . .
{
comprising components of the field effect type
}
Collapse
H01L 27/0711
. . . . . .
{
in combination with bipolar transistors and diodes, or capacitors, or resistors
}
H01L 27/0716
. . . . . . .
{
in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
}
H01L 27/0722
. . . . . . .
{
in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
}
Collapse
H01L 27/0727
. . . . . .
{
in combination with diodes, or capacitors or resistors
}
H01L 27/0733
. . . . . . .
{
in combination with capacitors only
}
H01L 27/0738
. . . . . . .
{
in combination with resistors only
}
Collapse
H01L 27/0744
. . . . .
{
without components of the field effect type
}
Collapse
H01L 27/075
. . . . . .
{
Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
}
Collapse
H01L 27/0755
. . . . . . .
{
Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
}
Collapse
H01L 27/0761
. . . . . . . .
{
Vertical bipolar transistor in combination with diodes only
}
H01L 27/0766
. . . . . . . . .
{
with Schottky diodes only
}
H01L 27/0772
. . . . . . . .
{
Vertical bipolar transistor in combination with resistors only
}
H01L 27/0777
. . . . . . . .
{
Vertical bipolar transistor in combination with capacitors only
}
H01L 27/0783
. . . . . . .
{
Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
}
Collapse
H01L 27/0788
. . . . . .
{
comprising combinations of diodes or capacitors or resistors
}
H01L 27/0794
. . . . . . .
{
Combinations of capacitors and resistors
}
Collapse
H01L 27/08
. . .
including only semiconductor components of a single kind
H01L 27/0802
. . . .
{
Resistors only
}
Collapse
H01L 27/0805
. . . .
{
Capacitors only
}
H01L 27/0808
. . . . .
{
Varactor diodes
}
H01L 27/0811
. . . . .
{
MIS diodes
}
H01L 27/0814
. . . .
{
Diodes only
}
H01L 27/0817
. . . .
{
Thyristors only
}
Collapse
H01L 27/082
. . . .
including bipolar components only
H01L 27/0821
. . . . .
{
Combination of lateral and vertical transistors only
}
Collapse
H01L 27/0823
. . . . .
{
including vertical bipolar transistors only
}
H01L 27/0825
. . . . . .
{
Combination of vertical direct transistors of the same conductivity type having different characteristics, (e.g. Darlington transistors)
}
H01L 27/0826
. . . . . .
{
Combination of vertical complementary transistors
}
H01L 27/0828
. . . . . .
{
Combination of direct and inverse vertical transistors
}
Collapse
H01L 27/085
. . . .
{
including field-effect components only
}
Collapse
H01L 27/088
. . . . .
the components being field-effect transistors with insulated gate
H01L 27/0883
. . . . . .
{
Combination of depletion and enhancement field effect transistors
}
H01L 27/0886
. . . . . .
{
including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
Collapse
H01L 27/092
. . . . . .
Complementary MIS field-effect transistors
H01L 27/0921
. . . . . . .
{
Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
}
H01L 27/0922
. . . . . . .
{
Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
}
H01L 27/0924
. . . . . . .
{
including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
H01L 27/0925
. . . . . . .
{
comprising an N-well only in the substrate
}
H01L 27/0927
. . . . . . .
{
comprising a P-well only in the substrate
}
H01L 27/0928
. . . . . . .
{
comprising both N- and P- wells in the substrate, e.g. twin-tub
}
H01L 27/095
. . . . .
the components being Schottky barrier gate field-effect transistors
H01L 27/098
. . . . .
the components being PN junction gate field-effect transistors
Collapse
H01L 27/10
. . .
including a plurality of individual components in a repetitive configuration
H01L 27/101
. . . .
{
including resistors or capacitors only
}
Collapse
H01L 27/102
. . . .
including bipolar components
H01L 27/1021
. . . . .
{
including diodes only
}
Collapse
H01L 27/1022
. . . . .
{
including bipolar transistors
}
H01L 27/1023
. . . . . .
{
Bipolar dynamic random access memory structures (circuits G11C 11/24, G11C 11/34)
}
H01L 27/1024
. . . . . .
{
Arrays of single bipolar transistors only, e.g. read only memory structures
}
H01L 27/1025
. . . . . .
{
Static bipolar memory cell structures (circuits G11C 11/40)
}
H01L 27/1026
. . . . . .
{
Bipolar electrically programmable memory structures (using fuses H01L 23/525)
}
H01L 27/1027
. . . . .
{
Thyristors
}
H01L 27/1028
. . . . .
{
Double base diodes
}
Collapse
H01L 27/105
. . . .
including field-effect components
WARNING
-

H01L 27/1052
. . . . .
{
Memory structures and multistep manufacturing processes therefor not provided for in groups H01L 27/1055 to H01L 27/112
}
H01L 27/1055
. . . . .
{
comprising charge coupled devices of the so-called bucket brigade type
}
H01L 27/1057
. . . . .
{
comprising charge coupled devices (CCD) or charge injection devices (CID)
}
Collapse
H01L 27/108
. . . . .
Dynamic random access memory structures (circuits G11C1/24, G11C 11/34)
NOTE
-
In this group and its subgroups classification is made in any appropriate place

H01L 27/10802
. . . . . .
{
comprising floating-body transistors, e.g. floating-body cells (floating-body transistors per se H01L 29/7841)
}
Collapse
H01L 27/10805
. . . . . .
{
with one-transistor one-capacitor memory cells
}
Collapse
H01L 27/10808
. . . . . . .
{
the storage electrode stacked over transistor
}
H01L 27/10811
. . . . . . . .
{
with bit line higher than capacitor
}
H01L 27/10814
. . . . . . . .
{
with capacitor higher than bit line level
}
H01L 27/10817
. . . . . . . .
{
the storage electrode having multiple wings
}
H01L 27/1082
. . . . . . .
{
the capacitor extending under transfer transistor area
}
H01L 27/10823
. . . . . . .
{
the transistor having a trench structure in the substrate
}
H01L 27/10826
. . . . . . .
{
the transistor being of the FinFET type
}
WARNING
-
not complete pending completion of reclassification; see also H01L 27/10823

Collapse
H01L 27/10829
. . . . . . .
{
the capacitor being in a substrate trench
}
H01L 27/10832
. . . . . . . .
{
the capacitor extending under or around transfer transistor area
}
H01L 27/10835
. . . . . . . .
{
having storage electrode extension stacked over transistor
}
Collapse
H01L 27/10838
. . . . . . .
{
the capacitor and the transistor being in one trench
}
H01L 27/10841
. . . . . . . .
{
the transistor being vertical
}
Collapse
H01L 27/10844
. . . . . .
{
Multistep manufacturing methods
}
Collapse
H01L 27/10847
. . . . . . .
{
for structures comprising one transistor one-capacitor memory cells
}
WARNING
-
not complete pending completion of reclassification; see also H01L 27/10844

Collapse
H01L 27/1085
. . . . . . . .
{
with at least one step of making the capacitor or connections thereto (making a capacitor for integrated circuits H01L 28/40, H01L 29/66181)
}
Collapse
H01L 27/10852
. . . . . . . . .
{
the capacitor extending over the access transistor
}
H01L 27/10855
. . . . . . . . . .
{
with at least one step of making a connection between transistor and capacitor, e.g. plug
}
H01L 27/10858
. . . . . . . . .
{
the capacitor extending under the access transistor area
}
Collapse
H01L 27/10861
. . . . . . . . .
{
the capacitor being in a substrate trench
}
H01L 27/10864
. . . . . . . . . .
{
in combination with a vertical transistor
}
H01L 27/10867
. . . . . . . . . .
{
with at least one step of making a connection between transistor and capacitor, e.g. buried strap
}
H01L 27/1087
. . . . . . . . . .
{
with at least one step of making the trench
}
Collapse
H01L 27/10873
. . . . . . . .
{
with at least one step of making the transistor (making the transistor per se H01L 29/66409)
}
H01L 27/10876
. . . . . . . . .
{
the transistor having a trench structure in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H01L 27/10864)
}
H01L 27/10879
. . . . . . . . .
{
the transistor being of the FinFET type
}
WARNING
-
not complete pending completion of reclassification; see also H01L 27/10876

Collapse
H01L 27/10882
. . . . . . . .
{
with at least one step of making a data line
}
H01L 27/10885
. . . . . . . . .
{
with at least one step of making a bit line
}
H01L 27/10888
. . . . . . . . .
{
with at least one step of making a bit line contact
}
H01L 27/10891
. . . . . . . . .
{
with at least one step of making a word line
}
H01L 27/10894
. . . . . . .
{
with simultaneous manufacture of periphery and memory cells
}
H01L 27/10897
. . . . . .
{
Peripheral structures
}
Collapse
H01L 27/11
. . . . .
Static random access memory structures
{
and multistep manufacturing processes therefor (circuits G11C 11/40)
}
Collapse
H01L 27/1104
. . . . . .
{
the load element being a MOSFET transistor
}
H01L 27/1108
. . . . . . .
{
the load element being a thin film transistor
}
H01L 27/1112
. . . . . .
{
the load element being a resistor (resistors for integrated circuits H01L 28/20, H01L 29/8605)
}
H01L 27/1116
. . . . . .
{
Peripheral circuit region
}
WARNING
-
not complete, pending reorganisation, see provisionally also H01L 27/105

Collapse
H01L 27/112
. . . . .
Read-only memory structures
{
[ROM
}
and multistep manufacturing processes therefor]
H01L 27/11206
. . . . . .
{
Programmable ROM [PROM], e.g. memory cells comprising a transistor and a fuse or an antifuse
}
Collapse
H01L 27/11213
. . . . . .
{
ROM only
}
Collapse
H01L 27/1122
. . . . . . .
{
with source and drain on the same level, e.g. lateral transistors
}
H01L 27/11226
. . . . . . . .
{
Source or drain contact programmed
}
Collapse
H01L 27/11233
. . . . . . . .
{
Gate programmed, e.g. different gate material or no gate
}
H01L 27/1124
. . . . . . . . .
{
Gate contact programmed
}
H01L 27/11246
. . . . . . . . .
{
Gate dielectric programmed, e.g. different thickness
}
Collapse
H01L 27/11253
. . . . . . . .
{
Doping programmed, e.g. mask ROM
}
H01L 27/1126
. . . . . . . . .
{
Entire channel doping programmed
}
H01L 27/11266
. . . . . . . . .
{
Source or drain doping programmed
}
H01L 27/11273
. . . . . . .
{
with source and drain on different levels, e.g. vertical channel
}
H01L 27/1128
. . . . . . .
{
with transistors on different levels, e.g. 3D ROM
}
Collapse
H01L 27/11286
. . . . . .
{
Peripheral circuit regions
}
WARNING
-
not complete pending reorganisation, see provisionally also H01L 27/105

H01L 27/11293
. . . . . . .
{
of memory structures of the ROM-only type
}
Collapse
H01L 27/115
. . . . . .
Electrically programmable read-only memories
{
and multistep manufacturing processes therefor
}
Collapse
H01L 27/11502
. . . . . . .
{
with ferroelectric memory capacitor
}
H01L 27/11504
. . . . . . . .
{
Top-view layout
}
WARNING
-
Not complete, see H01L 27/11502

H01L 27/11507
. . . . . . . .
{
Memory core region
}
H01L 27/11509
. . . . . . . .
{
Peripheral circuit region
}
H01L 27/11512
. . . . . . . .
{
Boundary region between core and peripheral circuit region
}
WARNING
-
Not complete, see H01L 27/11502

H01L 27/11514
. . . . . . . .
{
Three-dimensional arrangements, e.g. cells on different height levels
}
WARNING
-
Not complete, see H01L 27/11502

Collapse
H01L 27/11517
. . . . . . .
{
with floating gate
}
WARNING
-
Group H01L 27/11517 and subgroups are not complete pending reorganisation. See also H01L 27/115

H01L 27/11519
. . . . . . . .
{
Top-view layout
}
Collapse
H01L 27/11521
. . . . . . . .
{
Memory core region core region (three-dimensional arrangements H01L 27/11551)
}
H01L 27/11524
. . . . . . . . .
{
with at least one cell select transistor, e.g. NAND
}
Collapse
H01L 27/11526
. . . . . . . .
{
Peripheral circuit region
}
H01L 27/11529
. . . . . . . . .
{
of memory regions comprising at least one cell select transistor, e.g. NAND
}
Collapse
H01L 27/11531
. . . . . . . . .
{
Simultaneous fabrication of periphery and memory cells
}
Collapse
H01L 27/11534
. . . . . . . . . .
{
including only one type of peripheral transistor
}
H01L 27/11536
. . . . . . . . . . .
{
Control gate layer used for the peripheral transistor
}
H01L 27/11539
. . . . . . . . . . .
{
Intergate dielectric layer used for the peripheral transistor
}
H01L 27/11541
. . . . . . . . . . .
{
Floating-gate layer used for the peripheral transistor
}
H01L 27/11543
. . . . . . . . . . .
{
Tunnel dielectric layer used for the peripheral transistor
}
H01L 27/11546
. . . . . . . . . .
{
including different types of peripheral transistors
}
H01L 27/11548
. . . . . . . .
{
Boundary region between core and peripheral circuit regions
}
Collapse
H01L 27/11551
. . . . . . . .
{
Three-dimensional arrangements, e.g. cells on different height levels
}
Collapse
H01L 27/11553
. . . . . . . . .
{
with source and drain on different levels, e.g. with sloping channel
}
H01L 27/11556
. . . . . . . . . .
{
the channel comprising at least one vertical portion, e.g. U-shaped channel
}
WARNING
-
not complete pending reorganisation, see provisionally also H01L 27/11551

H01L 27/11558
. . . . . . . .
{
the control gate being a doped region, e.g. single-poly memory cells
}
H01L 27/1156
. . . . . . . .
N: the floating gate being an electrode shared by a plurality of components]
Collapse
H01L 27/11563
. . . . . . .
{
with charge trapping gate insulator, e.g. MNOS, NROM
}
H01L 27/11565
. . . . . . . .
{
Top-view layout
}
WARNING
-
Not complete, see H01L 27/115

Collapse
H01L 27/11568
. . . . . . . .
{
Memory core region (three-dimensional arrangements H01L 27/11578)
}
H01L 27/1157
. . . . . . . . .
{
with at least one cell select transistor, e.g. NAND
}
H01L 27/11573
. . . . . . . .
{
Peripheral circuit region
}
H01L 27/11575
. . . . . . . .
{
Boundary region between core and peripheral circuit region
}
WARNING
-
Not complete, see H01L 27/115

Collapse
H01L 27/11578
. . . . . . . .
{
Three-dimensional arrangements, e.g. cells on different height levels
}
WARNING
-
Not complete, see H01L 27/115

Collapse
H01L 27/1158
. . . . . . . . .
{
with source and drain on different levels, e.g. with sloping channel
}
H01L 27/11582
. . . . . . . . . .
{
the channel comprising at least one vertical portion, e.g. U-shaped channel
}
WARNING
-
not complete pending reorganisation, see provisionally also H01L 27/11578

Collapse
H01L 27/11585
. . . . . . .
{
with gate electrode comprising a layer which is used for its ferroelectric memory properties, e.g. MFS (metal-ferroelectric-semiconductor), MFMIS (metal-ferroelectric-metal-insulator-semiconductor)
}
H01L 27/11587
. . . . . . . .
{
Top-view layout
}
WARNING
-
Not complete, see H01L 27/11585

H01L 27/1159
. . . . . . . .
{
Memory core region
}
H01L 27/11592
. . . . . . . .
{
Peripheral circuit region
}
H01L 27/11595
. . . . . . . .
{
Boundary region between core and peripheral circuit region
}
WARNING
-
Not complete, see H01L 27/11585

H01L 27/11597
. . . . . . . .
{
Three-dimensional arrangements, e.g. cells on different height levels
}
WARNING
-
Not complete, see H01L 27/11585

Collapse
H01L 27/118
. . . .
Masterslice integrated circuits
H01L 27/11801
. . . . .
{
using bipolar technology
}
Collapse
H01L 27/11803
. . . . .
{
using field effect technology
}
H01L 27/11807
. . . . . .
{
CMOS gate arrays
}
H01L 27/11896
. . . . .
{
using combined field effect/bipolar technology
}
H01L 27/11898
. . . . .
{
Input and output buffer/driver structures
}
Collapse
H01L 27/12
. .
the substrate being other than a semiconductor body, e.g. an insulating body
Collapse
H01L 27/1203
. . .
{
the substrate comprising an insulating body on a semiconductor body, e.g. SOI (three-dimensional layout H01L 27/0688)
}
H01L 27/1207
. . . .
{
combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
}
H01L 27/1211
. . . .
{
combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
}
Collapse
H01L 27/1214
. . .
{
comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
}
WARNING
-
Subgroups of H01L 27/1214 are not complete, pending reorganisation; see provisionally also this group

H01L 27/1218
. . . .
{
with a particular composition or structure of the substrate
}
Collapse
H01L 27/1222
. . . .
{
with a particular composition, shape or crystalline structure of the active layer
}
H01L 27/1225
. . . . .
{
with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
}
H01L 27/1229
. . . . .
{
with different crystal properties within a device or between different devices
}
H01L 27/1233
. . . . .
{
with different thicknesses of the active layer in different devices
}
H01L 27/1237
. . . .
{
with a different composition, shape, layout or thickness of the gate insulator in different devices
}
Collapse
H01L 27/124
. . . .
{
with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits (wiring structures per se H01L 23/52)
}
H01L 27/1244
. . . . .
{
for preventing breakage, peeling or short circuiting
}
H01L 27/1248
. . . .
{
with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
}
H01L 27/1251
. . . .
{
comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
}
H01L 27/1255
. . . .
{
integrated with passive devices, e.g. auxiliary capacitors
}
Collapse
H01L 27/1259
. . . .
{
Multistep manufacturing methods
}
Collapse
H01L 27/1262
. . . . .
{
with a particular formation, treatment or coating of the substrate
}
H01L 27/1266
. . . . . .
{
the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
}
Collapse
H01L 27/127
. . . . .
{
with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
}
Collapse
H01L 27/1274
. . . . . .
{
using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor (crystallisation per se H01L 21/02667)
}
H01L 27/1277
. . . . . . .
{
using a crystallisation promoting species, e.g. local introduction of Ni catalyst
}
H01L 27/1281
. . . . . . .
{
by using structural features to control crystal growth, e.g. placement of grain filters
}
H01L 27/1285
. . . . . . .
{
using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
}
H01L 27/1288
. . . . .
{
employing particular masking sequences or specially adapted masks, e.g. half-tone mask
}
H01L 27/1292
. . . . .
{
using liquid deposition, e.g. printing
}
H01L 27/1296
. . . . .
{
adapted to increase the uniformity of device parameters
}
H01L 27/13
. . .
combined with thin-film or thick-film passive components
{
(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00)
}
Collapse
H01L 27/14
.
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation (radiation-sensitive components structurally associated with one or more electric light sources only H01L 31/14; couplings of light guides with optoelectronic elements G02B 6/42)
Collapse
H01L 27/142
. .
Energy conversion devices
H01L 27/1421
. . .
{
comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
}
Collapse
H01L 27/1422
. . .
{
in a repetitive configuration, e.g. planar multijunction solar cells
}
Collapse
H01L 27/1423
. . . .
{
comprising only thin film solar cells deposited on a substrate, e.g. thin film (a-Si, CIS, CdTe) solar modules
}
H01L 27/1425
. . . . .
{
characterized by special patterning methods to connect the cells in a module, e.g. laser cutting of the conductive and/or active layers
}
H01L 27/1426
. . . . .
{
comprising particular structures for the electrical interconnection of adjacent solar cells in the module
}
H01L 27/1427
. . . . .
{
comprising specific means for obtaining a partial light transmission of the module, e.g. partially transparent thin film solar modules for windows
}
H01L 27/1428
. . . .
{
comprising multiple vertical junction or V-groove junction solar cells formed in a semiconductor substrate
}
Collapse
H01L 27/144
. .
Devices controlled by radiation
H01L 27/1443
. . .
{
with at least one potential jump or surface barrier
}
H01L 27/1446
. . .
{
in a repetitive configuration
}
Collapse
H01L 27/146
. . .
Imager structures
Collapse
H01L 27/14601
. . . .
{
Structural or functional details thereof
}
Collapse
H01L 27/14603
. . . . .
{
Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
}
H01L 27/14605
. . . . . .
{
Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
}
H01L 27/14607
. . . . . .
{
Geometry of the photosensitive area
}
Collapse
H01L 27/14609
. . . . .
{
Pixel-elements with integrated switching, control, storage or amplification elements (scanning details of imagers H04N 3/15; circuitry of imagers H04N 5/369)
}
H01L 27/1461
. . . . . .
{
characterised by the photosensitive area
}
Collapse
H01L 27/14612
. . . . . .
{
involving a transistor
}
H01L 27/14614
. . . . . . .
{
having a special gate structure
}
H01L 27/14616
. . . . . . .
{
characterised by the channel of the transistor, e.g. channel having a doping gradient
}
H01L 27/14618
. . . . .
{
Containers
}
Collapse
H01L 27/1462
. . . . .
{
Coatings
}
H01L 27/14621
. . . . . .
{
Colour filter arrangements
}
H01L 27/14623
. . . . . .
{
Optical shielding
}
Collapse
H01L 27/14625
. . . . .
{
Optical elements or arrangements associated with the device
}
H01L 27/14627
. . . . . .
{
Microlenses
}
H01L 27/14629
. . . . . .
{
Reflectors
}
H01L 27/1463
. . . . .
{
Pixel isolation structures
}
H01L 27/14632
. . . . .
{
Wafer-level processed structures
}
H01L 27/14634
. . . . .
{
Assemblies, i.e. Hybrid structures
}
H01L 27/14636
. . . . .
{
Interconnect structures
}
H01L 27/14638
. . . . .
{
Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
}
H01L 27/1464
. . . . .
{
Back illuminated imager structures
}
H01L 27/14641
. . . . .
{
Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
}
Collapse
H01L 27/14643
. . . .
{
Photodiode arrays; MOS imagers
}
Collapse
H01L 27/14645
. . . . .
{
Colour imagers
}
H01L 27/14647
. . . . . .
{
Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
}
Collapse
H01L 27/14649
. . . . .
{
Infra-red imagers
}
H01L 27/1465
. . . . . .
{
of the hybrid type
}
H01L 27/14652
. . . . . .
{
Multispectral infra-red imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
}
Collapse
H01L 27/14654
. . . . .
{
Blooming suppression
}
H01L 27/14656
. . . . . .
{
Overflow drain structures
}
Collapse
H01L 27/14658
. . . . .
{
X-ray, gamma-ray or corpuscular radiation imagers (measuring X-, gamma- or corpuscular radiation G01T 1/00)
}
H01L 27/14659
. . . . . .
{
Direct radiation imagers structures
}
H01L 27/14661
. . . . . .
{
of the hybrid type
}
H01L 27/14663
. . . . . .
{
Indirect radiation imagers e.g. using luminescent members
}
Collapse
H01L 27/14665
. . . .
{
Imagers using a photoconductor layer
}
H01L 27/14667
. . . . .
{
Colour imagers
}
Collapse
H01L 27/14669
. . . . .
{
Infra-red imagers
}

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Last Modified: 11/26/2012 5:18:16 PM