Manual of U.S. Patent Classification
as of June 30, 2000

Class
365
STATIC INFORMATION STORAGE AND RETRIEVAL

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Subclass definitions may be accessed by clicking on the subclass number, below.

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Subclass		Title
ClassTitle		===> STATIC INFORMATION STORAGE AND RETRIEVAL
1		MAGNETIC BUBBLES
2		. Disposition of elements
3		. . Lattice
4		. Decoder
5		. Logic
6		. Rotating field circuits
7		. Detectors
8		. . Magnetoresistive
9		. . Hall effect
10		. . Optical
11		. Generators
12		. . By splitting
13		. Plural interacting paths
14		. . Closed loop
15		. . . Major-minor
16		. . With switch at interacting point
17		. . . Idler switch
18		. . Boundary
19		. Conductor propagation
20		. . Including A.C. signal
21		. . Three phase signals
22		. One's and zero's
23		. Plural direction propagation
24		. . Nonsequential
25		. Velocity
26		. . Turns
27		. Bias
28		. . Variable
29		. Strip domain
30		. In-plane field (nonrotating)
31		. Different size bubbles
32		. Multiple magnetic layer
33		. Magnetic storage material
34		. . Amorphous
35		. Guide structure
36		. . Ion implantation
37		. . Slots or rails
38		. . Zigzag
39		. . Overlays
40		. . . On opposite sides of storage medium
41		. . . Dots
42		. . . Wedges
43		. . . Chevrons
44		. . . Rectangular bars
185.01		FLOATING GATE
185.02		. Disturbance control
185.03		. Multiple values (e.g., analog)
185.04		. Data security
185.05		. Particular connection
185.06		. . Segregated columns
185.07		. . Cross-coupled cell
185.08		. . With volatile signal storage device
185.09		. . Error correction (e.g., redundancy, endurance)
185.1		. . Extended floating gate
185.11		. . Bank or block architecture
185.12		. . . Parallel row lines (e.g., page mode)
185.13		. . . Global word or bit lines
185.14		. . Program gate
185.15		. . . Weak inversion injection
185.16		. . Virtual ground
185.17		. . Logic connection (e.g., NAND string)
185.18		. Particular biasing
185.19		. . Multiple pulses (e.g., ramp)
185.2		. . Reference signal (e.g., dummy cell)
185.21		. . . Sensing circuitry (e.g., current mirror)
185.22		. . . Verify signal
185.23		. . Drive circuitry (e.g., word line driver)
185.24		. . Threshold setting (e.g., conditioning)
185.25		. . Line charging (e.g., precharge, discharge, refresh)
185.26		. . Floating electrode (e.g., source, control gate, drain)
185.27		. . Substrate bias
185.28		. . Tunnel programming
185.29		. . Erase
185.3		. . . Over erasure
185.31		. . . Nonsubstrate discharge
185.32		. . . . Radiation erasure
185.33		. . . Flash
45		ANALOG STORAGE SYSTEMS
46		. Resistive
47		. Thermoplastic
48		. Magnetic
49		ASSOCIATIVE MEMORIES
50		. Magnetic
51		FORMAT OR DISPOSITION OF ELEMENTS
52		HARDWARE FOR STORAGE ELEMENTS
53		. Shields
54		. Ground plane
55		. Magnetic
56		. . Spacers
57		. . Keeper
58		. . Slot
59		. . Embedded conductor
60		. . Air gap
61		. . Hairpin conductor
62		. . Permanent magnet
63		INTERCONNECTION ARRANGEMENTS
64		. Optical
65		. Ferroelectric
66		. Magnetic
67		. . Plural diagonal
68		. . Tree
69		. . Crossover
70		. . Woven
71		. Negative resistance
72		. Transistors or diodes
73		RECIRCULATION STORES
74		. Magnetic
75		. Stepwise
76		. Delay lines
77		. Plural paths
78		PLURAL SHIFT REGISTER MEMORY DEVICES
80		MAGNETIC SHIFT REGISTERS
81		. Bidirectional
82		. Two cells per bit
83		. SiPo/PiSo
84		. Core in transfer loop
85		. Continuous
86		. . Plated wire
87		. Thin film
88		. . Domain tip
89		. Logic
90		. Multiaperture cell
91		. . Ladder
92		. . With other type core
93		. Including delay means
94		READ ONLY SYSTEMS (I.E.. SEMIPERMANENT)
95		. With override (i.e., latent images)
96		. Fusible
97		. Magnetic
98		. . Random core
99		. . Random wiring
100		. Resistive
101		. Inductive
102		. Capacitative
103		. Semiconductive
104		. . Transistors
105		. . Diodes
106		RADIANT ENERGY
107		. Chemical fluids
108		. Liquid crystal
109		. Photoconductive and ferroelectric
110		. Electroluminescent and photoconductive
111		. Electroluminescent
112		. Photoconductive
113		. Amorphous
114		. Semiconductive
115		. . Diodes
116		. Plasma
117		. Ferroelectric
118		. Electron beam
119		. Color centers
120		INFORMATION MASKING
121		. Polarization
122		. . Magneto-optical
123		. Bragg cells
124		. Diffraction
125		. . Holograms
126		. Thermoplastic
127		. Transparency
128		. Electron beams
129		SYSTEMS USING PARTICULAR ELEMENT
130		. Three-dimensional magnetic array
131		. Two magnetic cells per bit
132		. Different size cores
133		. Cells of diverse coercivity
134		. Continuous cells
135		. . Elongated or bar-shaped cell
136		. . . Twisters
137		. . . Tubular
138		. . . Chain
139		. . . Plated wire
140		. Multiaperture cell
141		. . Aperture plate
142		. . Aperture with transverse axis
143		. . . Biax
144		. . Same size apertures
145		. Ferroelectric
146		. Electrets
147		. Persistent internal polarization (PIP)
148		. Resistive
149		. Capacitors
150		. . Inherent
151		. Molecular or atomic
152		. . Nuclear induction or spin echo
153		. Electrochemical
154		. Flip-flop (electrical)
155		. . Plural emitter or collector
156		. . Complementary
157		. Magnetostrictive or piezoelectric
158		. Magnetoresistive
159		. Negative resistance
160		. Superconductive
161		. . Thin film
162		. . Josephson
163		. Amorphous (electrical)
164		. Electrical contacts
165		. . Coherer
166		. . Relay
167		. Simulating biological cells
168		. Ternary
169		. Gunn effect
170		. Hall effect
171		. Magnetic thin film
172		. . Isotropic
173		. . Multiple magnetic storage layers
174		. Semiconductive
175		. . Diodes
176		. . Silicon on sapphire (SOS)
177		. . Bioplar and FET
178		. . Ion implantation
179		. . Plural emitter or collector
180		. . Four layer devices
181		. . Complementary conductivity
182		. . Insulated gate devices
183		. . . Charge coupled
184		. . . Variable threshold
186		. . Single device per bit
187		. . Three devices per bit
188		. . Four or more devices per bit
189.01		READ/WRITE CIRCUIT
189.02		. Multiplexing
189.03		. Plural use of terminal
189.04		. Simultaneous operations (e.g., read/write)
189.05		. Having particular data buffer or latch
189.06		. Including signal clamping
189.07		. Including signal comparison
189.08		. Including specified plural element logic arrangement
189.09		. Including reference or bias voltage generator
189.11		. Including level shift or pull-up circuit
189.12		. With shift register
190		. For complementary information
191		. Signals
192		. . Radio frequency
193		. . Strobe
194		. . Delay
195		. . Inhibit
196		. . . Sense/inhibit
197		. . Microwave
198		. . Transmission
199		. . Coincident A.C. signal with pulse
200		. Bad bit
201		. Testing
202		. Complementing/balancing
203		. Precharge
204		. Accelerating charge or discharge
205		. Flip-flop used for sensing
206		. Noise suppression
207		. . Differential sensing
208		. . . Semiconductors
209		. . . Magnetic
210		. . . . Reference or dummy element
211		. . Temperature compensation
212		. . . Semiconductor
213		. . . Magnetic
214		. . Particular wiring
215		. Optical
216		. . Holographic
217		. Electron beam
218		. Erase
219		. SiPo/PiSo
220		. Parallel read/write
221		. Serial read/write
222		. Data refresh
223		. Bridge
224		. Eddy current
225		. Minor loop
225.5		. Including magnetic element
225.6		. Having bipolar circuit element
225.7		. Having fuse element
226		POWERING
227		. Conservation of power
228		. Data preservation
229		. . Standby power
230.01		ADDRESSING
230.02		. Multiplexing
230.03		. Plural blocks or banks
230.04		. . Alternate addressing (e.g., even/odd)
230.05		. Multiple port access
230.06		. Particular decoder or driver circuit
230.07		. . Including magnetic element
230.08		. Including particular address buffer or latch circuit arrangement
230.09		. Combined random and sequential addressing
231		. Using selective matrix
232		. . Magnetic
233		. Sync/clocking
233.5		. . Transition detection
234		. Optical
235		. . Page memories
236		. Counting
237		. Electron beam
238		. Cartesian memories
238.5		. Byte or page addressing
239		. Sequential
240		. . Using shift register
241		. . Detectors
242		. Current steering
243		. . Diode
243.5		. Including magnetic element
244		MISCELLANEOUS

Information Products Division -- Contacts

Questions regarding this report should be directed to:

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Information Products Division
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Washington, DC 20231

tel: (703) 306-2600
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Last Modified: 6 October 2000