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| Class Numbers & Titles | Class Numbers Only | USPC Index | International | HELP |
| You are viewing a USPC Schedule. |
| Class 438 | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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![]() | ![]() | 1 | HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM |
![]() | ![]() | 2 | HAVING SUPERCONDUCTIVE COMPONENT |
![]() | ![]() | 3 | HAVING MAGNETIC OR FERROELECTRIC COMPONENT |
![]() | ![]() | 4 | REPAIR OR RESTORATION |
![]() | ![]() | 5 | INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION |
![]() | ![]() | 6 | Interconnecting plural devices on semiconductor substrate |
![]() | ![]() | 7 | Optical characteristic sensed |
![]() | ![]() | 10 | Electrical characteristic sensed |
![]() | ![]() | 14 | WITH MEASURING OR TESTING |
![]() | ![]() | 15 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
![]() | ![]() | 16 | Optical characteristic sensed |
![]() | ![]() | 17 | Electrical characteristic sensed |
![]() | ![]() | 19 | HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.) |
![]() | ![]() | 20 | ELECTRON EMITTER MANUFACTURE |
![]() | ![]() | 21 | MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD |
![]() | ![]() | 22 | MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL |
![]() | ![]() | 23 | Having diverse electrical device |
![]() | ![]() | 26 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
![]() | ![]() | 29 | Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) |
![]() | ![]() | 33 | Substrate dicing |
![]() | ![]() | 34 | Making emissive array |
![]() | ![]() | 36 | Ordered or disordered |
![]() | ![]() | 37 | Graded composition |
![]() | ![]() | 38 | Passivating of surface |
![]() | ![]() | 39 | Mesa formation |
![]() | ![]() | 42 | Groove formation |
![]() | ![]() | 45 | Dopant introduction into semiconductor region |
![]() | ![]() | 46 | Compound semiconductor |
![]() | ![]() | 48 | MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL |
![]() | ![]() | 49 | Chemically responsive |
![]() | ![]() | 50 | Physical stress responsive |
![]() | ![]() | 51 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
![]() | ![]() | 52 | Having cantilever element |
![]() | ![]() | 53 | Having diaphragm element |
![]() | ![]() | 54 | Thermally responsive |
![]() | ![]() | 56 | Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.) |
![]() | ![]() | 57 | Responsive to electromagnetic radiation |
![]() | ![]() | 58 | Gettering of substrate |
![]() | ![]() | 59 | Having diverse electrical device |
![]() | ![]() | 61 | Continuous processing |
![]() | ![]() | 63 | Particulate semiconductor component |
![]() | ![]() | 64 | Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
![]() | ![]() | 65 | Having additional optical element (e.g., optical fiber, etc.) |
![]() | ![]() | 66 | Plural responsive devices (e.g., array, etc.) |
![]() | ![]() | 68 | Substrate dicing |
![]() | ![]() | 69 | Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) |
![]() | ![]() | 70 | Color filter |
![]() | ![]() | 71 | Specific surface topography (e.g., textured surface, etc.) |
![]() | ![]() | 72 | Having reflective or antireflective component |
![]() | ![]() | 73 | Making electromagnetic responsive array |
![]() | ![]() | 74 | Vertically arranged (e.g., tandem, stacked, etc.) |
![]() | ![]() | 75 | Charge transfer device (e.g., CCD, etc.) |
![]() | ![]() | 76 | Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.) |
![]() | ![]() | 77 | Compound semiconductor |
![]() | ![]() | 78 | Having structure to improve output signal (e.g., exposure control structure, etc.) |
![]() | ![]() | 80 | Lateral series connected array |
![]() | ![]() | 82 | Having organic semiconductor component |
![]() | ![]() | 83 | Forming point contact |
![]() | ![]() | 84 | Having selenium or tellurium elemental semiconductor component |
![]() | ![]() | 85 | Having metal oxide or copper sulfide compound semiconductive component |
![]() | ![]() | 87 | Graded composition |
![]() | ![]() | 88 | Direct application of electric current |
![]() | ![]() | 89 | Fusion or solidification of semiconductor region |
![]() | ![]() | 90 | Including storage of electrical charge in substrate |
![]() | ![]() | 91 | Avalanche diode |
![]() | ![]() | 92 | Schottky barrier junction |
![]() | ![]() | 93 | Compound semiconductor |
![]() | ![]() | 94 | Heterojunction |
![]() | ![]() | 95 | Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing |
![]() | ![]() | 96 | Amorphous semiconductor |
![]() | ![]() | 97 | Polycrystalline semiconductor |
![]() | ![]() | 98 | Contact formation (i.e., metallization) |
![]() | ![]() | 99 | HAVING ORGANIC SEMICONDUCTIVE COMPONENT |
![]() | ![]() | 100 | MAKING POINT CONTACT DEVICE |
![]() | ![]() | 102 | HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT |
![]() | ![]() | 104 | HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT |
![]() | ![]() | 105 | HAVING DIAMOND SEMICONDUCTOR COMPONENT |
![]() | ![]() | 106 | PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR |
![]() | ![]() | 107 | Assembly of plural semiconductive substrates each possessing electrical device |
![]() | ![]() | 110 | Making plural separate devices |
![]() | ![]() | 115 | Including contaminant removal or mitigation |
![]() | ![]() | 116 | Having light transmissive window |
![]() | ![]() | 117 | Incorporating resilient component (e.g., spring, etc.) |
![]() | ![]() | 118 | Including adhesive bonding step |
![]() | ![]() | 120 | With vibration step |
![]() | ![]() | 121 | Metallic housing or support |