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| Class 257 | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| Click here for a printable version of this file | |
| When placing a mandatory classification in Class 257, a cross-reference classification is normally made in at least one of the appended E-subclasses. | ||
![[List of Pre Grant Publications for class 257 subclass 1]](../as.gif) | ![[List of Patents for class 257 subclass 1]](../ps.gif) | 1 | BULK EFFECT DEVICE |
| | 2 |  Bulk effect switching in amorphous material |
| | 3 |  With means to localize region of conduction (e.g., "pore" structure) |
| | 4 | With specified electrode composition or configuration |
| | 5 | In array |
| | 6 | Intervalley transfer (e.g., Gunn effect) |
| | 9 | THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) |
| | 10 | Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) |
| | 12 | Heterojunction |
| | 13 | Incoherent light emitter |
| | 14 | Quantum well |
| | 15 |  Superlattice |
| | 16 |  Of amorphous semiconductor material |
| | 17 | With particular barrier dimension |
| | 18 | Strained layer superlattice |
| | 20 | Field effect device |
| | 21 | Light responsive structure |
| | 22 | With specified semiconductor materials |
| | 23 | Current flow across well |
| | 24 | Field effect device |
| | 25 | Employing resonant tunneling |
| | 26 | Ballistic transport device |
| | 28 | Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) |
| | 29 | Ballistic transport device (e.g., hot electron transistor) |
| | 30 | Tunneling through region of reduced conductivity |
| | 31 | Josephson |
| | 32 | Particular electrode material |
| | 34 | Weak link (e.g., narrowed portion of superconductive line) |
| | 35 | Particular barrier material |
| | 36 | With additional electrode to control conductive state of Josephson junction |
| | 37 | At least one electrode layer of semiconductor material |
| | 39 | Three or more electrode device |
| | 40 | ORGANIC SEMICONDUCTOR MATERIAL |
| | 41 | POINT CONTACT DEVICE |
| | 42 | SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM |
| | 43 | SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE |
| | 44 | WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE |
| | 45 | Elongated alloyed region (e.g., thermal gradient zone melting, TGZM) |
| | 46 | In pn junction tunnel diode (Esaki diode) |
| | 47 | In bipolar transistor structure |
| | 48 | TEST OR CALIBRATION STRUCTURE |
| | 49 | NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) |
| | 50 | Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) |
| | 51 | Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) |
| | 52 | Amorphous semiconductor material |
| | 53 | Responsive to nonelectrical external signals (e.g., light) |
| | 54 | With Schottky barrier to amorphous material |
| | 55 | Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) |
| | 56 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 57 | Field effect device in amorphous semiconductor material |
| | 58 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 59 | In array having structure for use as imager or display, or with transparent electrode |
| | 60 | With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path) |
| | 61 | With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain) |
| | 62 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 63 | Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) |
| | 64 | Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) |
| | 65 | Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier) |
| | 66 | Field effect device in non-single crystal, or recrystallized, Semiconductor material |
| | 67 | In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) |
| | 68 | Capacitor element in single crystal semiconductor (e.g., DRAM) |
| | 69 | Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS) |
| | 70 | Recrystallized semiconductor material |
| | 71 | In combination with capacitor element (e.g., DRAM) |
| | 72 | In array having structure for use as imager or display, or with transparent electrode |
| | 73 | Schottky barrier to polycrystalline semiconductor material |
| | 74 | Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") |
| | 75 | Recrystallized semiconductor material |
| | 76 | SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS |
| | 79 | INCOHERENT LIGHT EMITTER STRUCTURE |
| | 80 | In combination with or also constituting light responsive device |
| | 81 | With specific housing or contact structure |
| | 83 | Light coupled transistor structure |
| | 84 | Combined in integrated structure |
| | 86 | Active layer of indirect band gap semiconductor |
| | 87 | With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP) |
| | 88 | Plural light emitting devices (e.g., matrix, 7-segment array) |
| | 89 | Multi-color emission |
| | 91 | With shaped contacts or opaque masking |
| | 92 | Alphanumeric segmented array |
| | 93 | With electrical isolation means in integrated circuit structure |
| | 94 | With heterojunction |
| | 95 | With contoured external surface (e.g., dome shape to facilitate light emission) |
| | 96 | Plural heterojunctions in same device |
| | 99 | With housing or contact structure |
| | 100 | Encapsulated |
| | 101 | With particular dopant concentration or concentration profile (e.g., graded junction) |
| | 102 | With particular dopant material (e.g., zinc as dopant in GaAs) |
| | 103 | With particular semiconductor material |
| | 104 | TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE |
| | 105 | In three or more terminal device |
| | 106 | Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode) |
| | 107 | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) |
| | 108 | Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal) |
| | 109 | Having only two terminals and no control electrode (gate), e.g., Shockley diode |
| | 110 | More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.) |
| | 111 | Triggered by V BO overvoltage means |
| | 112 | With highly-doped breakdown diode trigger |
| | 113 | With light activation |
| | 114 | With separate light detector integrated on chip with regenerative switching device |
| | 115 | With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) |
| | 116 | With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package |
| | 118 | With groove or thinned light sensitive portion |
