Class Definition for Class 257 - ACTIVE SOLID-STATE DEVICES (E.G.,TRANSISTORS, SOLID-STATE DIODES)

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CLASS 257,	ACTIVE SOLID-STATE DEVICES (E.G.,TRANSISTORS, SOLID-STATE DIODES)
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SECTION I - CLASS DEFINITION

This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.

SCOPE OF THE CLASS

Active solid-state electronic devices include diodes, transistors, thyristors, etc., but exclude pure resistors, capacitors, inductors, or combinations solely thereof. The latter class of devices is characterized as passive.

The subject matter to be found here includes only active solid-state devices, per se. It may include one or more such devices combined with contacts or leads, or structures configured to be tested on a semiconductor chip, or merely semiconductor material without contacts or leads where the sole disclosed use is an active solid-state device. This subject matter does not include active solid-state devices combined with significant circuits.

Claims reciting an integrated circuit nominally with significant metallization will be classified in Class 257, whereas otherwise, nominal recitation of an integrated circuit (i.e., without significant active solid-state device recitation) will not be sufficient to permit the device to be classified in Class 257.

KEY CONCEPTS

See Subclass References to the Current Class, below, for references that relate to key concepts and terms found in Class 257. An indication that a particular concept or term occurs in one or more subclasses does not mean that the indicated subclass or subclasses are the only places that subject matter may be found. That subject matter may possibly be found elsewhere in Class 257 listed under a related term or concept that may be broader or narrower or of the same scope.

OTHER CLASSIFICATION SYSTEMS

Each subclass definition may contain an OTHER CLASSIFICATION SYSTEMS listing that is to be used for informational purposes only. These classification listings may change at any time after their publication and are therefore not guaranteed to be current. In addition, the classification listing does not necessarily indicate the sole relationship between the U.S. Patent Classification System and foreign classifications. Even where a single classification is listed for a single U.S. subclass, a one-to-one correlation should not be inferred. As a result, information contained therein is considered to be only a guide to related subject matter.

SECTION II - LINES WITH OTHER CLASSES AND WITHIN THIS CLASS

A. Classes related to Class 257 subject matter in the sense that they employ active solid-state devices in electronic circuits and the relationship of these classes to Class 257 is mainly that of a combination to a subcombination or of a genus to a specie. See References to Other Classes, below, referencing this section.

B. Classes related to Class 257 subject matter in the sense that they employ active solid-state devices in electronic circuits and the use of active solid-state electronic devices primarily as a perfecting feature. See References to Other Classes, below, referencing this section.

C. See References to Other Classes below for classes that provide for materials used in active solid-state electronic devices.

D. See References to Other Classes, below, for classes related to Class 257 because they provide for methods of making, cleaning, coating, etc., active solid-state devices, e.g., Class 438, Semiconductor Device Manufacturing: Process.

E. See References to Other Classes, below, for Classes related to Class 257 because they provide for active solid-state electronic devices structures with a specified use, e.g., Class 136, Batteries: Thermoelectric and Photoelectric.

F. See References to Other Classes, below, for classes providing for provide for subcombination subject matter that can be used as component part of active solid-state electronic devices (e.g., lead frames) or perfect the device (e.g., a heat sink).

G. Classes which provide for passive solid-state electronic devices with names that may refer to either active or passive solid-state electronic devices, e.g., coherers, varistors, varactors. luminescent or electroluminescent devices. The devices may be part of the main subject matter of the class or may be used as circuit elements in circuits or control or measuring systems which form the main subject matter of the class.

See References to Other Classes, below, referencing this section.

SECTION III - SUBCLASS REFERENCES TO THE CURRENT CLASS

SEE OR SEARCH THIS CLASS, SUBCLASS:

1,	through 8, for bulk effect device.
2,	- 5, 16, 52-63, and 646, for amorphous semiconductor material.
4,	72, 91, 144, 150, 151, 175-177, 181, 182, 207-211, 246-250, 276, 309, 317, 401, 448, 457, 459, 503, 508, 573, 584, 587, 602, 621, 625, 666-676, and 692-697, for configuration of electrode, contact, lead or pad.
4,	32, 33, 81, 91, 99, 144, 150-153, 177-179, 181, 182, 203, 207-211, 276, 377, 382-385, 459, 503, 522, 554, 573, 576, 584, 602, 621, 625, 661-677, 690-700, and 734-786, for electrical contact or lead.
6,	through 8, for Gunn effect (intervalley transfer).
7,	for intervalley transfer (e.g., Gunn) device in integrated circuit.
10,	through 11, and 407, for controlled work function material.
10,	and 11, for electron emissive layer.
10,	through 27, and 104-106, for heterojunction involving quantum-mechanical tunneling.
10,	and 11, for photocathode.
10,	54, 73, 155, 192-195, 217, 260, 267, 269, 275-277, 280-284, 449-457, 471-486, and 928, for Schottky barrier.
10,	11, 30-39, and 314-326, for tunneling-insulator layer.
10,	11, and 407, for work function of material, controlled, e.g., low.
13,	76, 78, 85, 90, and 94-97, for heterojunction light emitter.
13,	79-103, and 918, for light emitting device.
13,	through 25, for quantum well device.
15,	through 22, and 28, for superlattice.
16,	55, 63, and 65, for heterojunction in non-single-crystal material.
18,	19, and 190, for mismatched or strained lattice.
18,	19, and 190, for mismatch of lattice constant.
18,	and 19, for strained layer superlattice heterojunction.
19,	76, 78, 103, 200-201, and 613-616, for alloy of two different semiconductors (e.g., Ga_xIn_1-xAs).
20,	24, 27, 57-61, 66-72, 133-145, 192-195, 202-211, 213, and 252-413, for field effect devices.
20,	24, and 194, for HEMT (High electron mobility transistor).
20,	27, 187, and 192-195, for heterojunction FETs.
21,	85, 184-189, for heterojunction in light responsive device.
21,	for light responsive or activated device (superlattice quantum well heterojunction).
21,	53-56, 59, 72, 80-85, 113-118, 184-189, 222, 223, 225-234, 257, 258, 290-294, 325, 428-466, 680, 681, and 749, for radiation responsive.
21,	and 187, for light responsive heterojunction transistor.
21,	187, 443, and 462, for photosensitive bipolar transistor.
26,	27, and 29, for ballistic transport device.
26,	27, and 29, for ballistic transport transistor.
31,	through 36, for Josephson device.
31,	through 36, and 661-663, for superconductive element/device.
31,	through 36, 468, and 661-663, for thermal device operated at cryogenic temperature.
33,	for high temperature (30 K) Josephson device.
40,	for organic semiconductor material.
41,	for point contact device.
42,	for Selenium (elemental).
44,	through 47, for alloyed junction.
45,	for thermal gradient zone melting (TGZM).
46,	104, and 105, for Esaki diode.
46,	and 104-106, for p-n junction type (Esaki type) tunneling.
47,	197, 205, 273, 350, 361, 370, 378, 423, 462, 477 though 479, 511, 512, 517, 518, 525, 526, 539-543, and 552-593, for bipolar transistor structure.
47,	for alloyed junction bipolar transistor.
48,	and 797, for calibration or test structure.5, for array of bulk effect amorphous switches.
48,	for test structures.
49,	through 75, for non-single crystal, as active layer.
49,	through 51, 64-75, 359, 377, 380-382, 385, 412, 505, 518, 520, 524-527, 538, 554, 576, 581, 588, and 754-757, for polycrystalline semiconductor material.
49,	through 51, and 64-75, for polycrystalline active junction material.
49,	through 51, and 64-75, for recrystallized active semiconductor layer.
50,	and 530, for anti-fuse component or element.
50,	530, and 928, for shorted devices, in general, e.g., anti-fuse elements.
53,	through 56, for amorphous semiconductor material device.
53,	through 56, 108, 225, 252, and 414, for responsiveness to nonelectric signal.
55,	and 63, for alloy of amorphous semiconductor materials.
55,	63, and 65, and 646, for silicon nitride to increase band gap of amorphous or polycrystalline silicon.
56,	58, 62, and 65, for for dangling bond.
56,	58, 62, and 68, for passivation of dangling bonds in nonsingle crystal semiconductor.
57,	through 61, 66-72, and 368-401, for insulated gate FET in integrated circuit.
57,	through 61, and 66-72, for FET in non-single crystal or recrystallized semiconductor material (e.g., amorphous or polycrystalline semiconductor as channel).
59,	72, and 88-93, for array as imager, or with transparent electrode, or as display (with plural light emitters).
59,	72, 449-457, and 749, for electrical contact or lead transparent to light.
59,	72, and 293, for photoresistor combined with accessing FET.
59,	72, 453, and 749, for transparent electrode.
60,	135, 136, 263-267, 302, and 328-334, for vertical channel field effect device.
64,	255, 521, 627, and 628, for crystal axis or plane.
65,	for alloy of polycrystalline semiconductor materials.
66,	67, 69, 379-381, 903, and 904, for static memory cell using FET.
67,	through 70, for stacked FETs.
67,	69, 70, and 74, for stacked FETs.
68,	through 71, 296-313, 296, 298, 300, 906, and 908, for capacitance combined with insulated gate device. (e.g., DRAM).
68,	71, and 295-313, for insulated gate device (capacitor or combined with capacitor).
68,	71, 296-313, and 905-908, for memory device component involving a capacitor (e.g., dynamic memory cell).
68,	71, 303, and 306-309, for stacked capacitors in DRAM cell.
68,	and 301-305, for capacitor in trench.
68,	283, 284, 330-334, 374, 397, 513, 514, 622, 647, and 648, for vertical walled groove in semiconductor.
69,	195, 204, 206, 338, 350, 351, 357-359, and 365-377, for CMOS.
69,	195, 204, 206, 274, 338, 350, 351, 357-359, and 369-377, for complementary field effect transistors.
74,	and 278, for three-dimensional integrated circuit.
76,	through 78, and 183-201, for heterojunction, generally.
76,	through 78, for wide band gap semiconductor material other than GaAsP or GaAlAs.
80,	through 85, for light responsive or activated device combined with light emitting device.
81,	99, 177-181, 584, 625, 675, 688, 689, 705, 707, 712-722, and 796, for heat sink.
81,	82, and 99, for housing or package for light emitter.
81,	and 82, for housing or package for light emitter combined with light receiver.
81,	82, 433, 434, 680, 681, for housing or package for light responsive device.
81,	99, and 666-677, for lead frame.
83,	for light coupled transistor structure.
86,	and 87 for indirect band gap active layer - light emitter.
87,	131, 156, 439, 523, 590, and 608-612, for deep level dopant/impurity.
87,	126, 131, 156, 523, 590, 609-612, and 617, for recombination centers.
91,	98, 151, 175, 176, 249, 250, 276, 282-284, 309, 317, 401, 418, 435, 448, 457, 459, 503, 508, 534, 573, 587, 602, 621, 662, and 664, for shape(d) contact, electrode, conductor, or terminal.
91,	98, 294, 323, 435, and 659, for optical shield.
93,	for plural light emitters in integrated circuit.
93,	374, 446, 499 and 564, for electrical isolation of components in integrated circuit.
95,	117, 118, 127, 170, 244, 283, 284, 301-305, 330-334, 418, 419, 447, 460, 466, 496, 534, 571, 586, and 618-628, for grooves, generally.
95,	170, 171, 452, 466, 496, 571, 586, 594, 600, 618, and 623-626, for mesa structure.
95,	for shaped contact, electrode, etc., external of heterojunction light emitter.
98,	116, 117, 294, and 432, for light fiber, guide, or pipe.
98,	for luminescent material used with light emitter.
98,	181, 418, 688, 710, 711, 728, and 730, for shaped housing or package.
98,	99, 116, 434, 680, and 681, for window (optical) for housing.
100,	433, 434, 667, 687, 767-and 796, for encapsulated.
101,	194, 219-221, 264, 269, 285, 335-345, 404, 430, 450, 458, 463, 492, 493, 497, 498, 543, 545, 548, 558, 583, 591, 592, 596, 597, 605, 606, 655-657, 927, and 929, for dopant/impurity concentration, incl., graded profile.
102,	227, 439, and 607-612, for specified, generally (e.g., photoionizable).
106,	for reverse conducting diode (tunnel diode).
106,	for Zener diode.
107,	through 182, and 918, for regenerative switching device.
108,	252, and 421-427, for magnetic field responsive.
108,	225, 254, and 415 and-419, for device responsive to pressure.
108,	222, 225, 254, and 417-419, for strain sensor.
108,	225, 252, and 467-470, for passivating device responsive to temperature.
109,	for Shockley diode.
110,	and 119-131, for bidirectional device (diac, rectifier).
113,	through 118, for regenerative-type switching device.
115,	123, and 157-161, for amplified gate in thyristor.
121,	for reverse conducting thyristor.
121,	for Static Induction Transistor (SIT) - Bipolar transistor as reverse path of bidirectional conducting thyristor.
122,	141, 146, and 162, for lateral structure in regenerative device.
124,	125, and 133-145, for FET in or combined with thyristor.
125,	137, 138, 143, and 149, for shunt, regenerative device.
125,	137, 138, 143, 149, and 154, for shorted emitter, anode or cathode, in thyristor.
127,	446, 510-522, 571, 577, and 594, for groove to define plural devices.
127,	170, 339, 372-376, 394-400, 409, 452, 484, 490, 493-495, and 605, for guard ring or region.
131,	156, 376, 424, 523, 590, and 617, for crystal damage.
133,	145, 195, 205, 273, 337, 350, 361, 362, 370, and 378, for field effect combined with bipolar type (including regenerative type) device.
134,	through 136, 217, 256-287, and 504, for JFET.
136,	205, 264, 268, 269, 392, for enhancement mode.
139,	through 145, and 212, for conductivity modulated transistor.
139,	through 145, 147-153, for extended latching current device.
139,	through 145, 147-153, and 372-376, for means to prevent latchup.
139,	through 145, and 211, for conductivity modulated transistor.
142,	148, 376, 553, and 583, for doping for gain reduction.
146,	476-479, and 499-564, for structure with elec. isolated components.
150,	151, 177-181, for housing or package for regenerative type switching device.
154,	169, 194, 195, 218, 264, 523, 646, and 656, for high resistivity semiconductor region - see, also, intrinsic material; PIN device.
154,	350, 358, 359, 363, 379-381, 516, 533, 536-543, 571, 572, 577, 580-582, and 904, for resistive element (resistor) (passive device).
164,	and 580-582, for ballasting of current (e.g., by resistors).
164,	through 166, 560-561, 563, and 579- 581, for multiple/plural emitter.
170,	for edge, beveled - preventing breakdown.
171,	496, 586, and 618+, for bevel.
171,	452, 483, and 484, for protection against edge breakdown.
171,	and 496, for reverse bevels.
173,	174, 328, 355-363, 487-496, and 546, for protection against overcurrent or overvoltage.
173,	529, 665, and 910, for fuse/fusible link.
173,	for overvoltage protection means in thyristor.
177,	through 181, 467, 468, 573, 625, 675, 688, 705-707, and 712-722, for cooling.
178,	179, and 746-748, for stress avoidance between electrode and semiconductor.
178,	through 179, 633, 747, and 748, for thermal expansion matching or compensation.
180,	and 733, for stud-type mount for housing.
180,	and 733, for stud mount.
181,	182, 688, 689, 726, 727, and 785 for press contact of electrode and semiconductor.
183.1, 193,	215-251, and 912, for charge transfer device.
184,	through 189, for heterojunction.
185,	and 191, for graded band gap.
185,	for staircase (light responsive heterojunction).
187,	197, and 198, for heterojunction bipolar transistor.
198,	for wide band gap emitter heterojunction bipolar transistor.
199,	481, 482, 551, and 603-606, for avalanche diode.
199,	482, and 604, for IMPATT.
199,	259, 275-277, 482, 523, 604, 624, 625, 659, 662, 664, and 728, for for microwave device component.
202+,	and 909, for master slice (gate array).
202+,	and 909, for gate arrays.
202,	through 211, and 909, for gate arrays.
205,	273, 350, 361, 370, and 378, for bipolar combined with field effect type device.
205,	273, 350, 361, 370, and 378, for bipolar transistor structure combined with FET.
206,	208, 210, and 211, for configuration of elements in gate array.
209,	for gate array with programmable signal paths.
210,	and 758-760, for multi-level metallization.
212,	for double-base diode (unijunction transistor).
212,	for Static Induction Transistor (SIT) - Unijunction transistor.
212,	for unijunction transistor.
214,	for charge injection device.
215,	218, and 225-251, for surface channel charge transfer device.
216+,	for bulk channel device.
216,	and 285, for buried channel.
219,	through 221, for nonuniform channel doping in buried channel CCD.
223,	230, and 445, for antiblooming.
223,	230, and 445, for suppression of blooming in light imager.
224,	and 243, for channel confinement.
225,	253, and 414, for chemical sensor.
225,	for CCD with fixed pattern memory as ROM.
228,	447, 460, for backside illumination.
239,	for floating diffusion as CCD Output Tap.
239,	261, and 315-323, for floating gate.
240,	for nonuniform channel thickness in CCD.
241,	for parallel channels in CCD.
245,	364, and 489, for resistive electrode.
246,	through 248, for nonuniform channel doping in CCD, for directionality.
249,	317, 359, 363, 364, 377, 380-382, 384, 385, 387, 407, 412, 413, 489, 505, 518, 520, 524-527, 538, 554, 576, 581, 588, 646, 754-756, 904, and 914, for polycrystalline material (including polysilicon contacts) other than active junction material.
251,	for bucket-brigade device.
254,	and 416, for acoustic energy detector.
256,	and 257, for light responsive PIN device combined with JFET.
257,	and 258, for JFET.
227,	and 439, for photoionization.
258,	291-294, 443-448, and 911, for array of electrode field effect devices.
260,	and 262, in or combined with a JFET device.
260,	and 261, for memory device component involving a JFET (e.g., taper isolated or floating pn junction gate type).
265,	for vertical current path JFET in integrated circuit.
266,	267, and 287, for parallel channels in JFET.
269,	and 285, for nonuniform channel doping in JFET.
272,	through 278, for JFET in integrated circuit.
275,	through 278, 662, and 664, for stripline lead.
276,	for air bridge electrical lead.
276,	for air bridge contact.
283,	and 284, for groove alignment of Schottky gate to source region in MESFET.
283,	through 284, 330-334, for gate electrode of FET formed in groove.
286,	for nonuniform channel thickness in JFET.
290,	and 294, for IGFET.
291,	through 294, 326, 334, 337, 338, 347-363, and 368-401, for insulated gate device (IGFET in integrated circuit).
294,	297, 340, 409, 435, 488-490, 503, 508, 630, 659-660, and 662, for shield electrode.
295,	298, and 314-326, for EPROM/EEPROM.
295,	298, 314, and 324-326, for MNOS insulated gate-type memory device component.
297,	349, 547, and 620, for means to prevent charge leakage or leakage current.
297,	349, 354, 372-376, 503, 547, and 620, for means to prevent leakage current or charge leakage.
297,	660, and 921, for protection against radiation (e.g., alpha particles).
297,	660, and 921, for radiation protection.
297,	422, and 659-660, for ionizing radiation shield, charged particles, electric or magnetic fields.
298,	and 315-326, for insulated gate device (floating gate memory device).
298,	and 315-323, for floating insulated gate memory-type memory device component.
299,	for substrate bias (electrical generator.
301,	through 305, 534, and 599, for groove involving a capacitor.
305,	354, 376, 398-400, 519, 620, 648, and 652, for channel stop.
305,	333, 374, 389, 395-399, 510-521, and 632-651, for field oxide.
312,	480, and 595-602, for voltage variable capacitance device.
314,	through 326 for variable threshold insulated gate device (e.g., EEPROM, non-volatile memory MOSFET).
322,	for programming of floating gate MISFET (avalanche breakdown).
323,	680, and 681, for light erasure of EPROM.
325,	for oxynitride as insulator in MNOS memory IGFET.
327,	through 346, for short channel.
328,	and 355-363, for overvoltage protection means in IGFET.
328,	and 355-363, for MOSFET gate protection.
331,	341, 342, and 401, for parallel channels in IGFET.
332,	346, 387, 388, 412, and 413, for self-aligned MOSFET gate.
333,	340, and 386-389, for reduction of gate capacitance (FET).
333,	346, 387, and 388, for overlap of gate electrode with source or drain in IGFET.
334,	337, and 338, for VMOS or DMOS short channel IGFET in integrated circuit.
336,	344, 408, and 900, for LDD (lightly doped drain) device.
339,	409, 483, 484, and 487-496, for preventing avalanche breakdown.
339,	409, and 488-490, for field relief electrode.
339,	409, 490, and 495, for floating pn junction guard region.
340,	394, and 630, for field shield electrode.
345,	and 404, for nonuniform channel doping in IGFET. depletion mode.
347,	through 354, and 507, for insulating substrate integrated circuit.
347,	through 354, and 507, for single crystal insulating substrate.
347,	through 354, and 507, for single crystal semiconductor layer on insulating substrate (SOI).
348,	391, 392, and 402-407, for depletion mode Insulated Gate FET.
349,	354, 372-376, 503, and 547, for controlling, reducing, etc. parasitics.
350,	511, 512, 525, and 555-562, for lateral bipolar transistor in integrated circuit.
354,	through 374, 395-399, 501, and 506-527, for dielectric isolation.
355,	through 363, for gate insulator breakdown protection in IGFET integrated circuit.
360,	and 367, for insulated gate device (controlling pn junction breakdown).
361,	362, and 497-499, for punch-device.
366,	for overlap of plural gate electrodes in IGFET.
368,	through 401, for PN junction isolation in MOSFET integrated circuit.
374,	394-398, 626, 631-651, and 758-760, for insulating/passivating coating.
374,	396-398, 510-521, 647, and 648, for groove (dielectric isolation means).
377,	382-385, 388, 412, 413, 454-458, 486, 518, 554, 576, 588, 747, 748, 754-757, 761, 763-764, and 768-770, for refractory electrode material.
377,	382-384, 388, 412, 413, 454-456, 485, 486, 576, 587, 751, 754-757, and 768-770, for silicide.
379,	through 381, and 903-904, for static RAM arrangement.
379,	through 381, 516, 528-543, 903, 904, 919, and 924, for passive components in integrated circuits.
382,	through 384, 576, 757, 768, and 769, for metal or silicide of platinum group metal, as ohmic contact.
383,	388, 412, 485, 486, 763, 764, and 770, for pure or alloyed titanium.
388,	407, 412, and 413, for metal or silicide of platinum group metal, as MOSFET gate.
390,	and 391, for array of IGFETs.
390,	and 391, for nonerasable (e.g., ROM).
390,	and 391, for mask-programmed MOSFET ROM.
401,	for nonuniform channel thickness in IGFET.
410,	411, 639-641, 649, and 760, for silicon nitride.
411,	and 760, for composite insulator material.
411,	for oxynitride as gate insulator in IGFET, in general.
422,	and 659, for magnetic field shielding
423,	511, 512, 525, 526, 556, 557-562, 575, and 576, for lateral bipolar transistor structure.
423,	for magnetic field sensing bipolar transistor.
426,	and 469, for passivating means to reduce temperature sensitivity.
427,	for magnetic field sensor in integrated circuit.
430,	and 458, for light or radiation responsive PIN device, in general.
431,	466, for light responsive or activated device generally.
437,	for anti-reflection coating.
444,	for matrix or array of light sensor elements overlying active switching elements in integrated circuit.
446,	for matrix or array of light sensors with specific isolation means in integrated circuit.
449,	through 457, for Schottky barrier.
453,	through 455, 485, and 486, for metal or silicide of platinum group metal, as Schottky barrier material.
458,	523, 538, and 656, for intrinsic material or region.
458,	for PIN diode.
459,	676, and 786, for bonding flag or pad
465,	592, 599, 653, and 654, for configuration of junction geometry.
466,	496, 571, 586, 594, 599, 600, and 618-628, for configuration of external portion of active device.
474,	for bipolar transistor with Schottky barrier transistor as emitter-base or base-collector junction.
474,	through 479, 512, 525, 555, 556, and 574-576, for integrated injection logic.
477,	through 479, for bipolar transistor in integrated circuit with Schottky barrier diode.
479,	and 570, for anti-saturation diode.
479,	for baker clamp.
486,	740, 751, and 767, for diffusion barrier.
491,	and 492, for means to increase breakdown voltage in integrated circuit.
492,	and 493, for RESURF device.
494,	for reverse biased (electrical) pn junction guard region.
494,	for reverse biased guard ring to prevent breakdown.
497,	and 498, for punchthrough transistor.
504,	for JFET isolation in integrated circuit (i.e., pinched-off region used for integrated circuit isolation).
509,	through 521, 544-556, and 929, for isolated PN junction.
509,	through 521, for PN junction isolation in integrated circuit combined with dielectric isolation.
511,	512, 525, 555, 556, 569, and 574-576, for complementary bipolar transistor structure.
511,	512, 525, 555, 556, 569, and 574-576, for complementary bipolar transistors.
511,	512, 514, 515, 517, 518, 525, 526, 539-543, and 552-563, for bipolar transistors in integrated circuit.
511,	512, 514, 517, 518, and 552-556, for bipolar transistors with pn junction isolation.
512,	569, and 574-576, for bipolar transistor structure with common active region.
512,	569, and 574-576, for complementary bipolar transistors with common active region.
512,	555, 556, and 574-576, for logic device (superintegrated) using Integrated Injection Logic (I²L).
514,	and 515, for walled emitter bipolar transistor.
522,	for air isolation of integrated circuit.
531,	for inductance in integrated circuit.
532,	through 535, for capacitance as passive component in non-FET I.C.
540,	for dynamic isolation pocket bias (electrical).
541,	for pinch resistor.
544,	through 556, for PN junction isolation in integrated circuit in general.
545,	for reduction of isolation junction capacitance.
546,	for overvoltage protection means in pn junction isolated integrated circuit.
546,	for reverse voltage polarity protection, in pn junction isolated integrated circuit.
549,	for collector diffused type isolation.
559,	lateral transistor formed along groove.
560,	through 564, for multiple/plural collectors.
560,	563, and 579-581, for plural emitters in bipolar transistor.
562,	for logic device (superintegrated) using Current Hogging Logic (CHL).
565,	through 593, for bipolar transistor structure, in general.
571,	for groove resistor in Darlington bipolar device.
573,	and 584, for housing or package for bipolar transistor devices.
592,	for configuration of bipolar transistor base region.
602,	for housing or package for voltage-variable capacitance device.
607,	and 917, for plural dopants of same conductivity type.
610,	for platinum (as deep level dopant).
620,	for scribe line or region.
624,	for prevention of skin effect, microwave device, by low resistance ohmic contact along mesa surface.
626,	and 629-652, for passivation of semiconductor surface.
634,	for passivating glass with ingredient to adjust softening or melting temperature.
639,	and 649, for oxynitride as passivating insulating layer.
642,	643, and 759, for organic insulating material or layer.
643,	759, and 788, for polyamide.
643,	759, and 792, for polyimide.
653,	654, for shaped PN junction.
655,	for reverse doping concentration gradient profile.
656,	for PIN device in general.
657,	for stepped profile.
657,	for stepped dopant concentration profile.
660,	for housing or package for radiation shielded device.
662,	and 664, for transmission line lead.
663,	for superconductive contact or lead on integrated circuit.
669,	670, 673, 674, 676, 688, 689, 692-697, 728, 735-739, 752, 758, 773-776, and 780-786, for shaped contact, electrode, etc.
669,	for lead frame having stress relief.
676,	for die bonding flag.
676,	for lead frame-type mount for chip.
678,	through 733, for housing or package, generally.
679,	and 922, for smart card (e.g., "credit card" integrated circuit package).
686,	for stacked housings.
700,	701, and 703-707, for ceramic housing or package material.
705,	for high thermal conductivity ceramic for package.
711,	for metal housing with mount for chip.
713,	for cooling of housing or contents for integrated circuit.
714,	through 716, for liquid coolant.
719,	for press contact of heat sink and semiconductor.
720,	for high thermal conductivity insert in heat sink.
731,	for mount for housing.
732,	for flanged type mount for housing.
735,	through 739, 746, 758-760, 773-776, 780-781, 786, 920, 923, 926, for configuration of electrode, etc.
738,	780, and 781, for ball-shaped leads, contacts or bonds.
740,	for prevention of spiking of contact metal.
741,	through 745, and 751, for gold (deep level dopant as contact or electrode).
742,	and 743, for dopant/impurity conductivity type in electrical contact material.
746,	for composite electrode material.
746,	for electrode material.
749,	for electrode transparent to light.
751,	767, and 915, for titanium nitride.
758,	through 760, for multiple metallization layers separated by insulating layer on integrated circuit.
760,	for oxynitride between metal levels in integrated circuit.
764,	765, and 768-771, for alloy of materials forming electrical contacts.
767,	for electromigration prevention or reduction.
777,	for chip on chip mount for chip.
778,	for flip chip mount for chip.
779,	and 780-784, for die or lead bond.
782,	and 783, for die bond.
900,	for MOSFET type gate sidewall insulating spacer.
901,	for MOSFET substrate bias (electrical).
901,	for MOSFET substrate bias.
902,	for FET with metal source region.
903,	and 904, for configuration of FETs for Static Memory Cell (SRAM).
905,	through 908, for configuration of Dynamic Memory (DRAM).
905,	for trench shared by plural DRAM cells.
906,	Electrode use for accessing capacitance, in DRAM.
910,	for array of diodes.
911,	for vidicon array (cross-reference collection).
915,	for titanium nitride.
919,	for parallel electrical connections to average out manufacturing variations.
920,	for parallel electrical connections to reduce resistance.
922,	for anti-tamper device.
922,	for diode arrays.
922,	for anti-tamper or inspection means for
923,	for conductor aspect ratio.
925,	for bridge rectifier module.
927,	for shaped depletion layer.
930,	for Peltier cooling (cross-reference collection).

SECTION IV - REFERENCES TO OTHER CLASSES

SEE OR SEARCH CLASS:

29,	Metal Working, subclasses 25.01+ for process and apparatus for making barrier layer or semiconductor devices not elsewhere classified; subclass 25.35 for piezoelectric device making not elsewhere classified; subclasses 25.41+ for electric condenser making not elsewhere classified; subclasses 592.1+ for process of mechanical manufacture of electrical devices, not elsewhere classified; and subclasses 825+ for electrical conductor manufacturing processes, including subclass 827 regarding beam lead frames and beam leads. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D).
29,	Metal Working, subclass 612 for making thermally variable resistors. (See G, Lines With Other Classes and Within This Class, above).
29,	Metal Working, appropriate subclasses for manufacturing methods of beam lead frame or beam lead devices. (Class providing for subcombination subject matter used as component part of active solid-state electronic devices. See Lines with Other Clases and Within This Class, F, above).
40,	Card, Picture, or Sign Exhibiting, subclass 544 for electroluminescent signs. (See B, Lines With Other Classes and Within This Class, above.)
62,	Refrigeration, subclasses 3.2+ for thermoelectric, e.g., Peltier effect cooling processes and apparatus. (See B, Lines With Other Classes and Within This Class, above.)
65,	Glass Manufacturing, subclasses 138+ for Electronic envelope header, terminal, or stem making means and subclass 155 for electronic device making involving fusion bonding. (Class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D).
73,	Measuring and Testing, subclass 31.06 for gas analysis semiconductor detector details; subclass 777 for semiconductor stress sensor structure; and subclass 754 for semiconductor type fluid pressure gauges. (Class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above).